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    • 1. 发明授权
    • Self monitoring redundant hydraeric control system
    • 自我监测冗余水力控制系统
    • US4054154A
    • 1977-10-18
    • US153858
    • 1971-06-16
    • Richard K. Mason
    • Richard K. Mason
    • F15B18/00F15B13/043F15B13/06F16K11/07
    • F15B18/00Y10T137/86598Y10T137/86614
    • A control system having a plurality of control channels each having its own source of system hydraeric fluid under pressure and each having a control valve and a monitor valve. A position indicating pressure signal is generated by each of the valves and is compared to detect discrepancies therebetween, and in the event of such a discrepancy, to generate a failure indicating signal. The failure indicating signal is subsequently transmitted to appropriate control apparatus which will effect proper switching to eliminate any part of the failed system from control or future possible control of the apparatus to which the system is connected.
    • 一种具有多个控制通道的控制系统,每个控制通道各自具有其自身的压力下的系统水力流体源,并且每个具有控制阀和监视阀。 指示压力信号的位置由每个阀产生,并且被比较以检测它们之间的差异,并且在这种差异的情况下,产生故障指示信号。 故障指示信号随后被发送到适当的控制装置,该控制装置将实现适当的切换以消除故障系统的任何部分不受系统所连接的装置的控制或将来可能的控制。
    • 3. 发明授权
    • Three mask process for making field effect transistors
    • 制作场效应晶体管的三个掩模工艺
    • US4216573A
    • 1980-08-12
    • US904182
    • 1978-05-08
    • Madhukar L. JoshiRichard K. MasonWilbur D. Pricer
    • Madhukar L. JoshiRichard K. MasonWilbur D. Pricer
    • H01L21/336H01L29/417H01L29/78B01J17/00
    • H01L29/78
    • A three mask method is provided for making a field effect transistor which includes the use of a first mask for defining first and second spaced apart diffusion regions, each having first and second ends, a second mask for defining a contact region at the first end of the first and second diffusion regions and for defining a protected region at the gate region and source and drain electrodes of the transistor, the protected region extending between the second ends of the first and second diffusion regions, and a third mask for forming a gate electrode within the protected region and contact electrodes in the contact region. The source and drain electrodes are formed between the gate electrode and the first and second diffusion regions by ion implantation techniques. The surfaces of the first and second diffusion regions between the contact electrodes and the second end of the first and second diffusions are oxidized to provide a crossover arrangement for gate electrode wiring, when desired, without requiring additional process steps.
    • 提供三掩模方法用于制造场效应晶体管,其包括使用第一掩模来限定第一和第二间隔开的扩散区域,每个第一和第二间隔扩散区域具有第一和第二端,第二掩模,用于限定第一和第二端部处的接触区域 所述第一和第二扩散区域以及用于在所述晶体管的栅极区域和源极和漏极电极处限定保护区域,所述保护区域在所述第一和第二扩散区域的第二端之间延伸,以及用于形成栅电极的第三掩模 在受保护区域内和接触区域中的接触电极。 源极和漏极通过离子注入技术形成在栅电极和第一和第二扩散区之间。 在需要的情况下,在接触电极和第一和第二扩散的第二端之间的第一和第二扩散区域的表面被氧化以提供用于栅极电极布线的交叉布置,而不需要额外的工艺步骤。