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1. 发明授权

US5257613A Engine control system 失效
标题翻译：发动机控制系统
公开(公告)号：US5257613A
公开(公告)日：1993-11-02
申请号：US723496
申请日：1991-06-28
申请人： Takashi Monda , Tomiharu Yokoyama , Mitsuhiro Maruyama
发明人： Takashi Monda , Tomiharu Yokoyama , Mitsuhiro Maruyama
IPC分类号： F02D41/00 , F02D41/14 , F02D41/18 , F02D45/00 , F02M25/08
CPC分类号： F02D41/0042 , F02D41/2441 , F02D41/2454 , F02M25/08 , F02D41/2448
摘要： An engine control system corrects an air-fuel ratio of an air and fuel mixture during feedback control in a feedback region of engine operating conditions and during a learning control in a learning region of engine operating conditions. A purge region of engine operating conditions, in which purging of fuel vapor into the engine is conducted, is defined so as to have a portion overlapping with the learning control region. The air-fuel learning and the fuel vapor purging are conducted alternately. A specific region of engine operating conditions is defined in the purge region for higher flow rates of intake air. The control system undergoes the air-fuel learning prior to the fuel vapor purge when engine operating conditions are in this specific region.
摘要翻译：发动机控制系统在发动机工作条件的反馈区域和在发动机工作条件的学习区域的学习控制期间的反馈控制期间校正空气和燃料混合物的空燃比。被定义为具有与学习控制区域重叠的部分的发动机操作条件的清洗区域，其中进行向发动机的吹扫。交替进行空燃学习和燃料蒸气净化。在吹扫区域中限定了特定区域的发动机运行条件，以实现较高的进气流量。当发动机工作条件处于该特定区域时，控制系统在进行燃料蒸气清除之前进行空气燃料学习。

2. 发明授权

US5367981A Apparatus for manufacturing crystals through floating zone method 失效
标题翻译：通过浮区法制造晶体的装置
公开(公告)号：US5367981A
公开(公告)日：1994-11-29
申请号：US43833
申请日：1993-04-07
申请人： Mitsuhiro Maruyama
发明人： Mitsuhiro Maruyama
IPC分类号： C30B13/08 , C30B13/30 , H01L21/208 , C30B29/06
CPC分类号： C30B13/08 , C30B13/30 , Y10T117/10 , Y10T117/1028
摘要： A apparatus for manufacturing crystals through a floating zone method which includes: structure for forming a heat-melt zone so as to be held at an upper portion of a solid crystal; a barrier enclosure having an opening a lower end portion and provided in the vicinity of an upper surface of the heat-melt zone; structure for supplying a raw material granular crystal into the barrier enclosure; and structure for moving the solid crystal and the heat-melt zone forming structure relative to each other to thereby bring about crystal growth, wherein the barrier enclosure has a bottom surface being flat or inclined toward the center of the barrier enclosure, and wherein the opening is constituted by at least one hole formed in the bottom surface of the barrier enclosure.
摘要翻译：一种用于通过浮区法制造晶体的装置，包括：用于形成热熔区以便保持在固体晶体的上部的结构; 隔离罩，其具有开口部，该下部端部设置在所述热熔融区域的上表面附近; 用于将原料颗粒状晶体供给到所述阻挡外壳中的结构; 以及用于相对于彼此移动固体晶体和热熔区形成结构从而导致晶体生长的结构，其中所述阻挡外壳具有平坦的或朝向所述阻挡外壳的中心倾斜的底表面，并且其中所述开口由形成在阻挡罩的底面的至少一个孔构成。

3. 发明授权

US06228181B1 Making epitaxial semiconductor device 失效
标题翻译：制作外延半导体器件
公开(公告)号：US06228181B1
公开(公告)日：2001-05-08
申请号：US09161494
申请日：1998-09-28
申请人： Shigeo Yamamoto , Mitsuhiro Maruyama
发明人： Shigeo Yamamoto , Mitsuhiro Maruyama
IPC分类号： H01L2906
CPC分类号： H01L31/103
摘要： An epitaxial semiconductor wafer characterized by making the P-N junction face which having either flat or uneven face in a manner of uniformed thickness from the top surface, due to making a P or N type first layer by the Chemical Vapor Deposition on the basic plate and also to making a N or P type secondary layer on said first layer, while both of the layers being highly and pure controlled silicon, and the light reflectors being located at the out side of said each P or N type layer for concentrating the incoming light to the P-N junction portion.
摘要翻译：一种外延半导体晶片，其特征在于，由于通过基板上的化学气相沉积形成P或N型第一层，使得PN结面从顶表面以均匀厚度的方式具有平坦或不均匀的表面，并且还以在所述第一层上制造N或P型次级层，而这两层是高纯度且纯的受控硅，并且光反射器位于所述每个P或N型层的外侧，用于将入射光聚集到 PN结部分。

4. 发明授权

US6001175A Crystal producing method and apparatus therefor 失效
标题翻译：水晶生产方法及其设备
公开(公告)号：US6001175A
公开(公告)日：1999-12-14
申请号：US610296
申请日：1996-03-04
申请人： Mitsuhiro Maruyama , Yasuhiro Maruyama
发明人： Mitsuhiro Maruyama , Yasuhiro Maruyama
IPC分类号： C30B23/06 , C30B25/10 , C30B25/14 , C30B29/06 , C30B29/40
CPC分类号： C30B25/10 , C30B25/14 , Y10T117/1004
摘要： A method and apparatus of producing a crystal by using of vapor growth process, wherein: a high-frequency coil or conductor having a coil or conductor surface to generate a plane-like induction electric field is arranged so that at least one gas blowout port is connected to the coil or conductor surface so as to face a solid substrate; and a component element or a chemical compound is continuously precipitated and grown on a surface of the solid substrate at a temperature of not higher than the melting point of the solid substrate while the solid substrate is inductively heated by the high-frequency coil or conductor and a raw gas is supplied onto the surface of the solid substrate through the gas blowout port, to thereby produce a polycrystal or monocrystal thin film.
摘要翻译：一种通过使用气相生长工艺制造晶体的方法和装置，其中：具有产生平面状感应电场的具有线圈或导体表面的高频线圈或导体被布置成使得至少一个气体喷射口是连接到线圈或导体表面以面对固体基板; 并且在固体基板的表面上以不高于固体基板的熔点的温度在固体基板的表面上连续析出和生长组分元素或化合物，同时固体基板被高频线圈或导体感应加热，通过气体吹出口将原料气体供给到固体基板的表面，由此制造多晶体或单晶薄膜。

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