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1. 发明专利

JP2005177399A Umbrella improved in safety 审中-公开
标题翻译： UMBRELLA改进安全
公开(公告)号：JP2005177399A
公开(公告)日：2005-07-07
申请号：JP2003436576
申请日：2003-12-15
申请人： Minoru Nagata , 實永田
发明人： NAGATA MINORU
IPC分类号： A45B11/00 , A45B19/10 , A45B25/02
CPC分类号： A45B2011/005
摘要： PROBLEM TO BE SOLVED: To provide an umbrella improving visibility with no feeling of oppression in using the umbrella even in the case of the medium-sized or large-sized umbrella.
SOLUTION: When the length of one to about six rib members in the umbrella with about six to twelve rib members are made short to mount an umbrella material, the part with the short rib members is formed to be opened in arch shape. In the case of using the umbrella in a city area, operability is improved by changing a direction of putting up the umbrella depending on particularly other walkers, bicycles, obstacles and a wind direction. Even in the case of the large-sized umbrella, safety is improved because of good visibility.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：即使在中型或大型伞的情况下，也可以提供伞在使用伞时不会受到压迫感的改善的可视性。解决方案：当将具有约6至12个肋构件的伞中的一个至约六个肋构件的长度缩短以安装伞形材料时，具有短肋构件的部分形成为以拱形打开。在城市使用伞的情况下，通过根据特别的其他步行者，自行车，障碍物和风向改变放置伞的方向来改善操作性。即使在大型雨伞的情况下，由于良好的可见度，安全性得到改善。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2006330821A Safety confirmation system 审中-公开
标题翻译：安全确认系统
公开(公告)号：JP2006330821A
公开(公告)日：2006-12-07
申请号：JP2005149574
申请日：2005-05-23
申请人： Minoru Nagata , Katsunori Nakagawa , Mototaka Yoshida , 勝憲中川 , 基崇吉田 , 実永田
发明人： NAKAGAWA KATSUNORI , YOSHIDA MOTOTAKA , NAGATA MINORU
IPC分类号： G08B25/04 , G06F13/00 , H04M3/42 , H04M3/53 , H04M11/04 , H04W4/18 , H04W8/18
摘要： PROBLEM TO BE SOLVED: To provide a system capable of easily, safely and surely confirming the safety of more victims, in the event of a disaster such as earthquake or seismic sea wave, using various pieces of information terminal equipment regardless of the scale of disaster or the simultaneous repetition degree. SOLUTION: In this safety confirmation system, in the event of a large-scale disaster, a victim transmits at least personal photographic data of a data storing person to the system holding a telephone number or the like as a retrieval keyword by e-mail, whereby the data are automatically made to a database. A person involved in the victim who wants safety information can safely and surely confirm the safety of the data storing person without session by directly inputting the retrieval keyword to URL using various piece of information terminal equipment and electronically browsing the data. According to the access quantity to the data, the kind of browsable data is limited, whereby information can be provided to further more non-victims, and link to data which is not existent yet can be further performed. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够容易，安全，肯定地确认更多受害者的安全的系统，在地震或地震海浪等灾害的情况下，使用各种信息终端设备，不管灾害规模或同时重复程度。解决方案：在该安全确认系统中，在发生大规模灾难的情况下，受害人将至少将数据存储人的个人摄影数据发送到作为检索关键词的电话号码等的系统通过e -mail，从而数据自动发送到数据库。受害者参与希望安全信息的人可以通过使用各种信息终端设备直接输入检索关键字到URL，并电子浏览数据，可以安全可靠地确认数据存储人员的安全性。根据对数据的访问量，可浏览数据的种类受到限制，可以向更多的非受害者提供信息，并且链接到不存在的数据可以进一步执行。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JPS59196695A Method for improving sound field 失效
标题翻译：改善声场的方法
公开(公告)号：JPS59196695A
公开(公告)日：1984-11-08
申请号：JP7074783
申请日：1983-04-21
申请人： Minoru Nagata
发明人： NAGATA MINORU
IPC分类号： H04R5/02
CPC分类号： H04R5/02
摘要： PURPOSE:To mitigate the restriction on the design of a hall based on the acoustic effect by projecting program sound from a microphone to a reflecting face such as a side wall, ceiling or the like of the hall or the like by means of a speaker so as to improve the sound field on a stage or seats. CONSTITUTION:The speaker 5 is installed toward the wall face 6 on the stage S in the hall 4 and the speakers 7, 7a are installed toward wall faces 8, 8a at the front part of the seats. Thus, the sound from each speaker is reflected as shown in arrows 9, 10 and 10a and the excellent acoustic effect is obtained independently of the position of listeners. The location of installation of the speakers and its number are increased/decreased depending on the structure of reflection of the wall faces.
摘要翻译：目的：借助于扬声器，通过将麦克风的节目声音投射到大厅的侧壁，天花板等的反射面，通过声音效果来缓解对大厅设计的限制。以改善舞台或座椅上的声场。构成：将扬声器5安装在大厅4的台面S上的壁面6上，并且将扬声器7,7a安装在座椅前部的壁面8,8a。因此，如箭头9,10和10a所示，来自每个扬声器的声音被反射，并且独立于聆听者的位置获得优异的声音效果。扬声器的安装位置及其数量根据壁面反射的结构而增加/减少。

4. 发明申请

US20100176869A1 TEMPERATURE COMPENSATION CIRCUIT 有权
标题翻译：温度补偿电路
公开(公告)号：US20100176869A1
公开(公告)日：2010-07-15
申请号：US12686613
申请日：2010-01-13
申请人： Koji Horie , Minoru Nagata
发明人： Koji Horie , Minoru Nagata
IPC分类号： H01L37/00
CPC分类号： H03F1/302 , H03F3/195 , H03F3/245 , H03F2200/447 , H03F2200/451
摘要： A temperature compensation circuit according to an embodiment of the present invention includes a bias circuit configured to output a bias current having a current value increasing in proportion to an absolute temperature in a low-temperature region in which a temperature is lower than a predetermined temperature, and having a greater current value than the current value proportional to the absolute temperature in a high-temperature region in which the temperature is equal to or greater than the predetermined temperature, and a transistor having a control terminal supplied with the bias current. The bias circuit includes a first current generating circuit configured to generate a first current increasing in proportion to the absolute temperature, a second current generating circuit configured to generate a second current that does not flow in the low-temperature region and flows in the high-temperature region, and a control circuit configured to control the second current and having a connection terminal capable of being connected with an external resistor for adjusting a magnitude of the second current, and is configured to generate a third current by adding the first current to the second current, and output the bias current depending on or equal to the third current.
摘要翻译：根据本发明实施例的温度补偿电路包括：偏置电路，被配置为输出与温度低于预定温度的低温区域中的绝对温度成比例地增加的电流值的偏置电流，并且具有比在温度等于或大于预定温度的高温区域中与绝对温度成比例的电流值的电流值更大的电流值，以及具有提供偏置电流的控制端子的晶体管。偏置电路包括：第一电流产生电路，被配置为产生与绝对温度成比例的第一电流;第二电流产生电路，被配置为产生不在低温区域中流动并在高温区域中流动的第二电流; 温度区域和控制电路，被配置为控制第二电流并具有能够与外部电阻器连接的连接端子，用于调整第二电流的大小，并且被配置为通过将第一电流加到第一电流中来产生第三电流并且根据或等于第三电流输出偏置电流。

5. 发明授权

US5842123A Radio paging system with voice transfer function and radio pager 失效
公开(公告)号：US5842123A
公开(公告)日：1998-11-24
申请号：US425736
申请日：1995-04-20
申请人： Nobuo Hamamoto , Tadashi Onishi , Tatsundo Suzuki , Minoru Nagata , Kenichi Mizuishi , Yosuke Tyojamori
发明人： Nobuo Hamamoto , Tadashi Onishi , Tatsundo Suzuki , Minoru Nagata , Kenichi Mizuishi , Yosuke Tyojamori
IPC分类号： G08B3/10 , G08B5/22 , H04M3/533 , H04M11/02 , H04W88/18 , H04M11/10
CPC分类号： H04W88/187 , G08B3/1025 , G08B5/229 , H04M11/022 , H04M3/533 , H04M2203/609
摘要： A radio paging system with voice transfer function for transmitting a voice message input from an ordinary push-button telephone set to a small-sized receive-only unsophisticated radio pager. A paging station is provided to transmit by radio the message from a telephone network to the radio pager as follows: voice information constituting the message is first converted from analog to digital format, compressed, stored in memory, and scrambled by a privacy function part for transmission. The radio pager in turn demodulates the received information, stores it in memory, retrieves a necessary message therefrom as designated, descrambles the designated message from scrambled state, expands the message from compressed state, and outputs the message as an audible output. In this manner, the user carrying the radio pager is able to get the message from the caller without the risk of being tapped by a third party.

6. 发明授权

US4860086A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4860086A
公开(公告)日：1989-08-22
申请号：US26254
申请日：1987-03-16
申请人： Tohru Nakamura , Masahiko Ogirima , Kazuo Nakazato , Takao Miyazaki , Naoki Yamamoto , Minoru Nagata , Shojiro Sugaki, deceased
发明人： Tohru Nakamura , Masahiko Ogirima , Kazuo Nakazato , Takao Miyazaki , Naoki Yamamoto , Minoru Nagata , Shojiro Sugaki, deceased
IPC分类号： H01L23/485 , H01L23/532
CPC分类号： H01L23/53271 , H01L23/485 , H01L2924/0002
摘要： A semiconductor device is constructed so that an insulation film is provided in regions other than a protruding portion of a substrate. A polycrystalline silicon layer and a metal silicide layer are formed over said insulation film to provide a multi-layer structure, and a take-out portion for at least one of the emitter, base, and collector members of a bipolar transistor provided in the mesa region is constituted by a film of this multi-layer structure. By virtue of the use of metal silicide together with the polycrystalline silicon, a very low resistance is achieved which enhances the device's operating speed. Further, the metal silicide is separated from the protruding portion of the substrate by a portion of the polycrystalline silicon to provide a smooth interface with the substrate. This smooth interface significantly reduces crystal defects in the single crystal substrate.
摘要翻译：构造半导体器件，使得绝缘膜设置在除了衬底的突出部分之外的区域中。在所述绝缘膜上形成多晶硅层和金属硅化物层以提供多层结构，以及设置在台面中的双极晶体管的发射极，基极和集电极构件中的至少一个的取出部分区域由该多层结构的膜构成。由于金属硅化物与多晶硅一起使用，所以实现了非常低的电阻，这增强了器件的工作速度。此外，金属硅化物通过多晶硅的一部分与衬底的突出部分分离，以提供与衬底的平滑界面。这种平滑的界面显着地减少了单晶衬底中的晶体缺陷。

7. 发明授权

US4857769A Threshold voltage fluctuation compensation circuit for FETS 失效
标题翻译： FETS的阈值电压波动补偿电路
公开(公告)号：US4857769A
公开(公告)日：1989-08-15
申请号：US143385
申请日：1988-01-13
申请人： Nobuo Kotera , Kiichi Yamashita , Taizo Kinoshita , Hirotoshi Tanaka , Satoshi Tanaka , Minoru Nagata
发明人： Nobuo Kotera , Kiichi Yamashita , Taizo Kinoshita , Hirotoshi Tanaka , Satoshi Tanaka , Minoru Nagata
IPC分类号： H03K19/003
CPC分类号： H03K19/00384
摘要： This invention relates to a threshold voltage detection circuit for detecting the threshold voltage of field effect transistors (FETs) and to a semiconductor circuit capable of a stable operation irrespective of the fluctuation of the threshold voltage by utilizing this threshold voltage detection circuit. The source-drain path of first FET is connected in series with that of second FET having substantially the same threshold voltage as that of the first FET and the conductances of these first and second FETs are set to a predetermined ratio to generate a voltage drop associated with the threshold voltage in the first FET. This voltage drop can be used for detecting the threshold voltage and for level-shifting. The output of the series connection of the first and second FETs is applied to the gate of a constant current FET having the same threshold voltage as that of the first and second FETs and the drain current of the constant current FET can thus be set irrespective of the fluctuation of the threshold voltage.
摘要翻译：本发明涉及一种阈值电压检测电路，用于通过利用该阈值电压检测电路来检测场效应晶体管（FET）的阈值电压和能够稳定工作的半导体电路，而与阈值电压的波动无关。第一FET的源极 - 漏极路径与具有与第一FET基本相同的阈值电压的第二FET的源极 - 漏极路径串联连接，并且将这些第一和第二FET的电导设置为预定的比率以产生相关的电压降与第一FET中的阈值电压。该电压降可用于检测阈值电压和电平转换。第一和第二FET的串联连接的输出被施加到具有与第一和第二FET相同的阈值电压的恒流FET的栅极，因此可以设定恒定电流FET的漏极电流，而不管阈值电压的波动。

8. 发明授权

US4825281A Bipolar transistor with sidewall bare contact structure 失效
标题翻译：双极晶体管与侧壁裸接触结构
公开(公告)号：US4825281A
公开(公告)日：1989-04-25
申请号：US435552
申请日：1982-10-21
申请人： Kazuo Nakazato , Tohru Nakamura , Masatoshi Matsuda , Takao Miyazaki , Tokuo Kure , Takahiro Okabe , Minoru Nagata
发明人： Kazuo Nakazato , Tohru Nakamura , Masatoshi Matsuda , Takao Miyazaki , Tokuo Kure , Takahiro Okabe , Minoru Nagata
IPC分类号： H01L21/8222 , H01L21/033 , H01L21/3205 , H01L21/331 , H01L27/06 , H01L29/423 , H01L29/70 , H01L29/72 , H01L29/73 , H01L29/732 , H01L29/735 , H01L23/48 , H01L29/04 , H01L29/34
CPC分类号： H01L29/66272 , H01L21/033 , H01L29/42304 , H01L29/72 , H01L29/732 , H01L29/735
摘要： A semiconductor device wherein the active regions of a transistor are formed in an opening provided in an insulating film, electrodes are led out by a polycrystalline silicon film formed on the insulating film, and the upper surfaces of the emitter and base electrodes and the exposed surface of the insulating film are substantially even.
摘要翻译：一种半导体器件，其中晶体管的有源区形成在设置在绝缘膜中的开口中，电极由形成在绝缘膜上的多晶硅膜引出，发射极和基极的上表面和暴露表面的绝缘膜基本上均匀。

9. 发明授权

US08427227B2 Temperature compensation circuit 失效
标题翻译：温度补偿电路
公开(公告)号：US08427227B2
公开(公告)日：2013-04-23
申请号：US13403121
申请日：2012-02-23
申请人： Koji Horie , Minoru Nagata
发明人： Koji Horie , Minoru Nagata
IPC分类号： G05F3/02 , H03K17/14
CPC分类号： H03F1/302 , H03F3/195 , H03F3/245 , H03F2200/447 , H03F2200/451
摘要： In one embodiment, a temperature compensation circuit includes a bias circuit configured to output a bias current having a current value increasing in proportion to an absolute temperature in a low-temperature region, and having a greater current value than the current value proportional to the absolute temperature in a high-temperature region, and a transistor which is supplied with the bias current. The bias circuit includes first to third transistors, a fourth transistor through which a first current flows, a fifth transistor, a sixth transistor through which a second current flows, and a control circuit having a connection terminal capable of being connected with an external resistor for adjusting a magnitude of the second current. The bias circuit generates a third current by adding the first current to the second current, and outputs the bias current that is the third current or a fourth current depending on the third current.
摘要翻译：在一个实施例中，温度补偿电路包括偏置电路，该偏置电路被配置为输出具有与低温区域中的绝对温度成比例增加的电流值的偏置电流，并且具有比与绝对值成比例的电流值更大的电流值高温区域的温度，以及被提供偏置电流的晶体管。偏置电路包括第一至第三晶体管，第一电流流经的第四晶体管，第五晶体管，第二电流流经的第六晶体管，以及具有能够与外部电阻器连接的连接端子的控制电路，调整第二电流的大小。偏置电路通过将第一电流加到第二电流来产生第三电流，并根据第三电流输出作为第三电流或第四电流的偏置电流。

10. 发明申请

US20110304387A1 CURRENT MIRROR CIRCUIT 失效
标题翻译：当前镜像电路
公开(公告)号：US20110304387A1
公开(公告)日：2011-12-15
申请号：US13046953
申请日：2011-03-14
申请人： Kenichi Hirashiki , Norio Hagiwara , Tsutomu Nakashima , Minoru Nagata
发明人： Kenichi Hirashiki , Norio Hagiwara , Tsutomu Nakashima , Minoru Nagata
IPC分类号： G05F1/10
CPC分类号： G05F3/262
摘要： In one embodiment, a current mirror circuit includes first to fourth insulated gate field effect transistors (FETs), and a bias circuit. The gate electrodes of the first and second FETs are connected to each other. The source electrode of the third FET is connected to the drain electrode of the first FET, and the drain electrode of the third FET is connected to the gate electrodes of the first and second FETs and a current input terminal. The gate electrode of the fourth FET is connected to the gate electrode of the third FET, the source electrode of the fourth FET is connected to the drain electrode of the second FET, and the drain electrode of the fourth FET becomes a current output terminal. The bias circuit is configured to provide a bias voltage to the gate electrodes of the third and fourth FETs.
摘要翻译：在一个实施例中，电流镜电路包括第一至第四绝缘栅场效应晶体管（FET）和偏置电路。第一和第二FET的栅电极彼此连接。第三FET的源电极连接到第一FET的漏电极，第三FET的漏电极连接到第一和第二FET的栅电极以及电流输入端。第四FET的栅电极与第三FET的栅电极连接，第四FET的源电极与第二FET的漏极连接，第四FET的漏极成为电流输出端。偏置电路被配置为向第三和第四FET的栅电极提供偏置电压。

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