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1. 发明专利

JP2014183845A Method for manufacturing jam using fruits of acanthopanax senticosus 有权
标题翻译：使用ACANTHOPANAX SENTICOSUS的水果制造JAM的方法
公开(公告)号：JP2014183845A
公开(公告)日：2014-10-02
申请号：JP2014057636
申请日：2014-03-20
申请人： Mi Young Kim , キム,ミヤン , Byung-No Lee , リ,ビュン−ノ , Seung Hae Lee , リ,スンヘ , Seung Gyu Lee , リ,スンギュ
发明人： KIM MI YOUNG , LEE BYUNG-NO , LEE SEUNG HAE , LEE SEUNG GYU
IPC分类号： A23L21/10 , A23L21/12
CPC分类号： A23L1/062 , A23L21/11 , A23V2002/00 , A23V2200/30 , A23V2250/2124
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a jam using Acanthopanax senticosus fruits, which can be easily taken by men and women of all ages without limitation in the customer age group by spreading it on breads or rice cakes, can be eaten without any repulsion while causing the unique sweet taste of the jam, and can be stored for a long period through fermentation and ripening, wherein the jam provides an increased unique and deep flavor of the Acanthopanax senticosus fruit and helps people to stay healthy due to useful pharmacological effects of Acanthopanax senticosus fruits.SOLUTION: A method for manufacturing jam using Acanthopanax senticosus fruits comprises: a washing and drying process; an adding process; a storing process; a fermentation process; a ripening process; a flesh extract-obtaining process; a boiling process; a thorough-steaming process; a vacuum packing process; and a final ripening process.
摘要翻译：要解决的问题：提供一种使用刺五加水果制造果酱的方法，其可以容易地被客户年龄组别的男性和女性在面包或米糕上传播而不受限制地使用，可以在没有任何排斥，同时引起果酱的独特甜味，并且可以通过发酵和成熟长时间储存，其中果酱提供刺五加水果的增加的独特和深度的味道，并帮助人们由于有用的药理学而保持健康刺五加果实的效果。解决方案：使用刺五加果实制造果酱的方法包括：洗涤和干燥过程; 一个添加过程; 存储过程; 发酵过程; 成熟过程; 肉提取物获取过程; 一个沸腾的过程; 一个彻底的蒸汽过程; 真空包装过程; 和最后的成熟过程。

2. 发明申请

US20140149124A1 APPARATUS, MEDIUM AND METHOD TO ENCODE AND DECODE HIGH FREQUENCY SIGNAL 审中-公开
标题翻译：装置，介质和编码和解码高频信号的方法
公开(公告)号：US20140149124A1
公开(公告)日：2014-05-29
申请号：US13684879
申请日：2012-11-26
申请人： Ki-hyun Choo , Eun-mi Oh , Ho-sang Sung , Jung-hoe Kim , Mi-young Kim
发明人： Ki-hyun Choo , Eun-mi Oh , Ho-sang Sung , Jung-hoe Kim , Mi-young Kim
IPC分类号： G10L19/00
CPC分类号： G10L21/038 , G10L19/0204 , G10L19/028
摘要： A method and apparatus to encoding or decoding an audio signal is provided. In the method and apparatus, a noise-floor level to use in encoding or decoding a high frequency signal is updated according to the degree of a voiced or unvoiced sound included in the signal.
摘要翻译：提供了一种对音频信号进行编码或解码的方法和装置。在该方法和装置中，根据信号中包含的有声或无声音的程度来更新用于对高频信号进行编码或解码的噪声底层电平。

3. 发明授权

US08428958B2 Apparatus and method of encoding and decoding signals 有权
标题翻译：信号编码和解码的装置和方法
公开(公告)号：US08428958B2
公开(公告)日：2013-04-23
申请号：US12246570
申请日：2008-10-07
申请人： Ho-sang Sung , Eun-mi Oh , Jung-hoe Kim , Ki-hyun Choo , Mi-young Kim
发明人： Ho-sang Sung , Eun-mi Oh , Jung-hoe Kim , Ki-hyun Choo , Mi-young Kim
IPC分类号： G10L19/00
CPC分类号： G10L19/002 , G10L19/00 , G10L19/18
摘要： A method of encoding an audio signal, where signals including two or more channel signals are downmixed to a mono signal, the mono signal is divided into a low-frequency signal and a high-frequency signal, the low-frequency signal is encoded through algebraic code excited linear prediction (ACELP) or transform coded excitation (TCX), and the high-frequency signal is encoded using the low-frequency signal. A method of decoding of an audio signal, a low-frequency signal encoded through ACELP or TCX is decoded, a high-frequency signal is decoded using the low-frequency signal, the low-frequency signal and the high-frequency signal are combined to generate a mono signal, and the mono signal is upmixed by decoding spatial parameters regarding signals including two or more channel signals.
摘要翻译：一种编码音频信号的方法，其中包括两个或更多个信道信号的信号被下混合到单声道信号，单声道信号被分为低频信号和高频信号，低频信号通过代数代码激励线性预测（ACELP）或变换编码激励（TCX），并且使用低频信号对高频信号进行编码。解码音频信号的方法，通过ACELP或TCX编码的低频信号进行解码，使用低频信号对低频信号进行解码，将低频信号和高频信号合成为产生单声道信号，并且单声道信号通过解码关于包括两个或更多个声道信号的信号的空间参数来混合。

4. 发明申请

US20120173247A1 APPARATUS FOR ENCODING AND DECODING AN AUDIO SIGNAL USING A WEIGHTED LINEAR PREDICTIVE TRANSFORM, AND A METHOD FOR SAME 审中-公开
标题翻译：用于使用加权线性预测变换编码和解码音频信号的装置及其方法
公开(公告)号：US20120173247A1
公开(公告)日：2012-07-05
申请号：US13381522
申请日：2010-06-28
申请人： Ho Sang Sung , Eun Mi Oh , Jung-Hoe Kim , Mi Young Kim
发明人： Ho Sang Sung , Eun Mi Oh , Jung-Hoe Kim , Mi Young Kim
IPC分类号： G10L19/00
CPC分类号： G10L19/04 , G10L19/002 , G10L19/24
摘要： Disclosed is an apparatus for encoding and/or decoding an audio signal having a variable bit rate (VBR). A target bit rate is determined in accordance with characteristics of an audio signal, and a weighted linear predictive transform coding is performed in accordance with the determined target bit rate.
摘要翻译：公开了一种用于对具有可变比特率（VBR）的音频信号进行编码和/或解码的装置。根据音频信号的特性确定目标比特率，并且根据确定的目标比特率执行加权的线性预测变换编码。

5. 发明申请

US20120070007A1 APPARATUS AND METHOD FOR BANDWIDTH EXTENSION FOR MULTI-CHANNEL AUDIO 有权
标题翻译：多通道音频带宽扩展的装置和方法
公开(公告)号：US20120070007A1
公开(公告)日：2012-03-22
申请号：US13232696
申请日：2011-09-14
申请人： Mi Young KIM , Ki Hyun CHOO , Eun Mi OH , Boris KUDRYASHOV , Kirill YURKOV
发明人： Mi Young KIM , Ki Hyun CHOO , Eun Mi OH , Boris KUDRYASHOV , Kirill YURKOV
IPC分类号： H04R5/00
CPC分类号： H04S3/008 , G10L19/008 , G10L21/038 , H04S2400/03 , H04S2420/03 , H04S2420/07
摘要： A method and apparatus of effectively encoding and decoding a high-frequency signal of a multi-channel audio are provided. A multi-channel audio decoding apparatus may down-mix a multi-channel audio input signal, expand a number of channels of the down-mixed signal, select at least one of the expanded channel signal, extract a parameter indicating a characteristic relation between the selected signal and the multi-channel audio input signal, and encode the down-mixed signal and the extracted parameter.
摘要翻译：提供了一种有效地对多声道音频的高频信号进行编码和解码的方法和装置。多声道音频解码装置可以对多声道音频输入信号进行降混，扩大下混合信号的信道数，选择扩展信道信号中的至少一个，提取表示该信道的特征关系的参数选择信号和多声道音频输入信号，并对下混合信号和提取的参数进行编码。

6. 发明申请

US20100167212A1 RESIST UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME 审中-公开
标题翻译：耐蚀组合物及使用其制造集成电路装置的方法
公开(公告)号：US20100167212A1
公开(公告)日：2010-07-01
申请号：US12654742
申请日：2009-12-30
申请人： Hyeon-Mo Cho , Sang-Kyun Kim , Mi-Young Kim , Sang-Ran Koh , Hui-Chang Yun , Yong-Jin Chung , Jong-Seob Kim , In-Sun Jung
发明人： Hyeon-Mo Cho , Sang-Kyun Kim , Mi-Young Kim , Sang-Ran Koh , Hui-Chang Yun , Yong-Jin Chung , Jong-Seob Kim , In-Sun Jung
IPC分类号： G03F7/20 , C08L61/00 , C08L83/00 , C08K5/3432 , C08G77/00
CPC分类号： G03F7/11 , C08K5/54 , G03F7/0752
摘要： A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the resist underlayer composition including a solvent and an organosilane-based polymer, the organosilane-based polymer being a polymerization product of at least one first compound represented Chemical Formulae 1 to 3 and at least one second compound represented by Chemical Formulae 4 and 5.
摘要翻译：抗蚀剂下层组合物和半导体集成电路器件的制造方法，所述抗蚀剂底层组合物包含溶剂和有机硅烷系聚合物，所述有机硅烷类聚合物为至少一种化学式1〜3的第一化合物的聚合产物和由化学式4和5表示的至少一种第二化合物。

7. 发明申请

US20100163992A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100163992A1
公开(公告)日：2010-07-01
申请号：US12647506
申请日：2009-12-27
申请人： Mi-Young Kim
发明人： Mi-Young Kim
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7816 , H01L29/04 , H01L29/0653 , H01L29/0873 , H01L29/0882 , H01L29/0886 , H01L29/66689
摘要： A semiconductor device includes a high voltage first conduction type well in a semiconductor substrate, a second conduction type body in the high voltage first conduction type well, a source region in the second conduction type body, a trench in the high voltage first conduction type well, a first isolation oxide, an impurity doped polysilicon film, and a second isolation oxide stacked in the trench in succession, a drain region in the high voltage first conduction type well on one side of the trench, and a polygate on and/or over the high voltage first conduction type well.
摘要翻译：半导体器件包括半导体衬底中的高电压第一导电型阱，高压第一导电型阱中的第二导电型体，第二导电型体中的源极区，高压第一导电型阱中的沟槽，第一隔离氧化物，掺杂杂质的多晶硅膜和第二隔离氧化物，其间依次层叠在沟槽的一侧的高压第一导电型阱中的漏极区域和在该沟槽的一侧上的多晶硅栅极高压第一导电型井。

8. 发明申请

US20090226824A1 Hardmask composition and associated methods 有权
标题翻译：硬掩模组成及相关方法
公开(公告)号：US20090226824A1
公开(公告)日：2009-09-10
申请号：US12320874
申请日：2009-02-06
申请人： Sang Kyun Kim , Sang Hak Lim , Mi Young Kim , Sang Ran Koh , Hui Chan Yun , Do Hyeon Kim , Dong Seon Uh , Jong Seob Kim
发明人： Sang Kyun Kim , Sang Hak Lim , Mi Young Kim , Sang Ran Koh , Hui Chan Yun , Do Hyeon Kim , Dong Seon Uh , Jong Seob Kim
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： H01L21/31144 , C08G77/04 , C09D183/04 , H01L21/0276
摘要： A hardmask composition for processing a resist underlayer film includes a solvent and an organosilane polymer, wherein the organosilane polymer is represented by Formula 6: In Formula 6, R is methyl or ethyl, R′ is substituted or unsubstituted cyclic or acyclic alkyl, Ar is an aromatic ring-containing functional group, x, y and z satisfy the relations x+y=4, 0.4≦x≦4, 0≦y≦3.6, and 4×10−4≦z≦1, and n is from about 3 to about 500.
摘要翻译：用于加工抗蚀剂下层膜的硬掩模组合物包括溶剂和有机硅烷聚合物，其中有机硅烷聚合物由式6表示：在式6中，R是甲基或乙基，R'是取代或未取代的环状或无环烷基，Ar是含芳环的官能团x，y和z满足x + y = 4,0.4 <= x <= 4,0 <= y <= 3.6和4×10-4 <= z <1的关系，以及 n为约3至约500。

9. 外观设计

USD579031S1 Refrigerator 有权
标题翻译：冰箱
公开(公告)号：USD579031S1
公开(公告)日：2008-10-21
申请号：US29290734
申请日：2008-01-08
申请人： Hang Bok Lee , Joung Young Joung , In Young Hwang , Mi Young Kim
设计人： Hang Bok Lee , Joung Young Joung , In Young Hwang , Mi Young Kim

10. 发明申请

US20080149979A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080149979A1
公开(公告)日：2008-06-26
申请号：US11960201
申请日：2007-12-19
申请人： Mi Young Kim
发明人： Mi Young Kim
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L27/0629 , H01L28/40
摘要： A method for fabricating a semiconductor device having a capacitor is provided. The method includes forming an isolation layer on a substrate on which a capacitor region and a transistor region are defined, forming a trench in the isolation layer, sequentially forming a first polysilicon layer, a dielectric layer, and a second polysilicon layer on an entire surface of the substrate including the trench, forming a capacitor in the trench by performing a chemical mechanical polishing process until an upper surface of the isolation layer is exposed, forming a first photoresist pattern to expose the transistor region, removing the second polysilicon layer and the dielectric layer using the first photoresist pattern as a mask, forming a second photoresist pattern in the transistor region, and forming a gate electrode by selectively removing the first polysilicon layer in the transistor region using the second photoresist pattern as a mask.
摘要翻译：提供一种制造具有电容器的半导体器件的方法。该方法包括在其上限定了电容器区域和晶体管区域的衬底上形成隔离层，在隔离层中形成沟槽，在整个表面上依次形成第一多晶硅层，电介质层和第二多晶硅层包括沟槽的衬底，通过执行化学机械抛光工艺在沟槽中形成电容器，直到隔离层的上表面露出，形成第一光致抗蚀剂图案以暴露晶体管区域，去除第二多晶硅层和电介质使用第一光致抗蚀剂图案作为掩模，在晶体管区域中形成第二光致抗蚀剂图案，并且通过使用第二光致抗蚀剂图案作为掩模选择性地去除晶体管区域中的第一多晶硅层来形成栅电极。

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