专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120100641A1 ETCHING APPARATUS AND ETCHING METHOD 审中-公开
标题翻译：蚀刻装置和蚀刻方法
公开(公告)号：US20120100641A1
公开(公告)日：2012-04-26
申请号：US13278651
申请日：2011-10-21
申请人： Katsuhiko TACHIBANA , Kenta Yoshinaga
发明人： Katsuhiko TACHIBANA , Kenta Yoshinaga
IPC分类号： H01L21/66 , H01L21/306
CPC分类号： H01L21/31116 , H01L21/6708 , H01L27/11524 , H01L29/40114
摘要： According to an embodiment, an etching apparatus includes a reaction chamber, a vacuum pump connected to the reaction chamber through the gate valve, a holding unit which holds a processing subject, an etching gas supply unit, a heating unit, and a sublimation amount determining unit. The etching gas supply unit supplies an etching gas which forms a reaction product by reacting with the processing subject to the reaction chamber. The heating unit heats the processing subject to an equal or higher temperature than temperature at which the reaction product will be sublimated. The sublimation amount determining unit monitors a predetermined physical amount which changes depending on the degree of sublimation of the reaction product during the sublimation process using the heating unit, in which the physical amount is used as a sublimation-amount-dependent change value which changes over time.
摘要翻译：根据实施例，蚀刻装置包括反应室，通过闸阀连接到反应室的真空泵，保持加工对象的保持单元，蚀刻气体供给单元，加热单元和升华量确定单元。蚀刻气体供给单元通过与反应室的加工对象反应而形成反应产物的蚀刻气体。加热单元将加工对象加热到与反应产物升华的温度相同或更高的温度。升华量确定单元监视使用加热单元的升华过程中根据反应产物的升华程度而改变的预定物理量，其中物理量被用作升华量依赖的变化值时间。

IPRDB

热门服务

关于我们

友情链接

联系方式