专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070170399A1 Particle-dispersed complex and solid electrolytic sensor using it 有权
标题翻译：使用粒子分散的复合和固体电解传感器
公开(公告)号：US20070170399A1
公开(公告)日：2007-07-26
申请号：US10590079
申请日：2004-09-16
申请人： Takashi Goto , Teiichi Kimura , Hajime Suzuki , Keiichiro Jinushi
发明人： Takashi Goto , Teiichi Kimura , Hajime Suzuki , Keiichiro Jinushi
IPC分类号： H01B1/12
CPC分类号： H01M4/90 , G01N27/308 , G01N27/4075
摘要： A particle-dispersed complex which can serve as a very active electrochemical catalyst used as the sensor electrode of a solid electrolyte sensor such as an oxygen sensor and an exhaust gas sensor that are sensitive even at low temperature, or as the electrode or the like of an electrochemical device or the like such as an electrolysis or a battery or the like by dispersing without aggregating ruthenium system fine particles having a very small particle size into a carbon matrix phase to keep ruthenium system fine particles in a high catalyst active state. The particle-dispersed complex is characterized by comprising fine particles that have a particles size of 5-100 nm, contain ruthenium element as a constituent element, and are dispersed in a matrix mainly containing carbon, and by having conductivity.
摘要翻译：可用作非常活跃的电化学催化剂的颗粒分散复合物，其用作即使在低温下也是敏感的固体电解质传感器如氧传感器和排气传感器的传感器电极，或者作为电极等电解或电池等的电化学装置等，通过不将聚集了非常小粒径的钌系微细颗粒分散在碳基体相中，以使钌体系细颗粒保持在高催化剂活性状态。颗粒分散复合物的特征在于包含粒径为5-100nm的微粒，含有钌元素作为构成元素，分散在主要含有碳的基质中并具有导电性。

2. 发明授权

US06228457B1 Optical data storage medium 有权
标题翻译：光学数据存储介质
公开(公告)号：US06228457B1
公开(公告)日：2001-05-08
申请号：US09399108
申请日：1999-09-20
申请人： Takashi Ueno , Keiichiro Jinushi , Katsuhisa Aratani , Masaaki Iwasaki , Ryohei Miyake
发明人： Takashi Ueno , Keiichiro Jinushi , Katsuhisa Aratani , Masaaki Iwasaki , Ryohei Miyake
IPC分类号： B32B300
CPC分类号： G11B7/258 , C23C14/185 , G11B7/24 , G11B7/243 , G11B7/2534 , G11B7/2542 , G11B7/256 , G11B7/2585 , Y10S428/913 , Y10S430/146 , Y10T428/21
摘要： There is disclosed an optical data storage medium in which the weather resistance of the semitransparent reflective film is improved and the adhesive property between the semitransparent reflective film and a substrate is enhanced, and which has a higher reliability. In an optical data storage medium (6), on the side on which a reproduction light (8) is incident, a first information layer (9) is located while on the side opposite to the side on which the reproduction light (8) is incident, a second information layer (10) is located. A semitransparent reflective film (3) of first information layer (9) is AgPdCu alloy thin films containing 0.5 to 3.0 weight % Pd and 0.1 to 3.0 weight % Cu or AgPdTi alloy thin films containing 0.5 to 3.0 weight % Pd and 0.1 to 3.0 weight % Ti. At the wavelength 650 nm, the optimum film thickness of AgPdCu alloy thin film is 5 to 18 nm and the optimum film thickness of AgPdTi alloy thin film is 10 to 25 nm. At the wavelength 450 nm, the optimum film thickness of AgPdCu alloy thin film is 10 to 25 nm, and the optimum film thickness of AgPdTi alloy thin film is 15 to 25 nm.
摘要翻译：公开了一种光学数据存储介质，其中半透明反射膜的耐候性得到改善，并且半透明反射膜和基板之间的粘合性提高，并且其具有更高的可靠性。在光学数据存储介质（6）中，在再现光（8）入射的一侧上，第一信息层（9）位于与再现光（8）所在的一侧相反的一侧事件中，定位第二信息层（10）。第一信息层（9）的半透明反射膜（3）是包含0.5〜3.0重量％的Pd和0.1〜3.0重量％的含有0.5〜3.0重量％的Pd和0.1〜3.0重量％的Cu或AgPdTi合金薄膜的AgPdCu合金薄膜％Ti。在波长650nm处，AgPdCu合金薄膜的最佳膜厚为5〜18nm，AgPdTi合金薄膜的最佳膜厚为10〜25nm。在波长450nm处，AgPdCu合金薄膜的最佳膜厚为10〜25nm，AgPdTi合金薄膜的最佳膜厚为15〜25nm。

3. 发明授权

US08043491B2 Particle-dispersed complex and solid electrolytic sensor using it 有权
标题翻译：使用粒子分散的复合和固体电解传感器
公开(公告)号：US08043491B2
公开(公告)日：2011-10-25
申请号：US10590079
申请日：2004-09-16
申请人： Takashi Goto , Teiichi Kimura , Hajime Suzuki , Keiichiro Jinushi
发明人： Takashi Goto , Teiichi Kimura , Hajime Suzuki , Keiichiro Jinushi
IPC分类号： G01N27/407
CPC分类号： H01M4/90 , G01N27/308 , G01N27/4075
摘要： A particle-dispersed complex which can serve as a very active electrochemical catalyst used as the sensor electrode of a solid electrolyte sensor such as an oxygen sensor and an exhaust gas sensor that are sensitive even at low temperature, or as the electrode or the like of an electrochemical device or the like such as an electrolysis or a battery or the like by dispersing without aggregating ruthenium system fine particles having a very small particle size into a carbon matrix phase to keep ruthenium system fine particles in a high catalyst active state. The particle-dispersed complex is characterized by comprising fine particles that have a particles size of 5-100 nm, contain ruthenium element as a constituent element, and are dispersed in a matrix mainly containing carbon, and by having conductivity.
摘要翻译：可用作非常活跃的电化学催化剂的颗粒分散复合物，其用作即使在低温下也是敏感的固体电解质传感器（例如氧传感器和排气传感器）的传感器电极，或用作电极等电解或电池等的电化学装置等，通过不将聚集了非常小粒径的钌系微细颗粒分散在碳基体相中，以使钌体系细颗粒保持在高催化剂活性状态。颗粒分散复合物的特征在于包含粒径为5-100nm的微粒，含有钌元素作为构成元素，分散在主要含有碳的基质中并具有导电性。

4. 发明授权

US07233094B2 Piezoelectric device comprising ultrahighly-oriented aluminum nitride thin film and its manufacturing method 失效
标题翻译：包含超高取向氮化铝薄膜的压电器件及其制造方法
公开(公告)号：US07233094B2
公开(公告)日：2007-06-19
申请号：US10516333
申请日：2003-05-29
申请人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Yoshitaka Sunagawa , Yoshihiro Umeuchi , Keiichiro Jinushi
发明人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Yoshitaka Sunagawa , Yoshihiro Umeuchi , Keiichiro Jinushi
IPC分类号： H01L41/04 , H01L41/18 , H04R17/00
CPC分类号： H01L41/316 , Y10T29/42
摘要： The present invention has an objective to provide a high performance piezoelectric element in which is formed an aluminum nitride thin film free from hillocks, cracks, and peeling which exhibits superhigh c-axis orientation, by forming a bottom electrode from a W layer with no intervening adhesive layer on a glass or other cheap substrate. The piezoelectric element of the present invention is a piezoelectric element using a superhigh-oriented aluminum nitride thin film characterized in that the piezoelectric element is free from hillocks, cracks, and peeling and includes a stack structure in which a bottom electrode, a piezoelectric body thin film, and a top electrode are sequentially formed on a substrate; the bottom electrode is made of an oriented W layer of which a (111) plane of W is parallel to a surface of the substrate; and the piezoelectric body thin film is formed of a c-axis-oriented aluminum nitride thin film having a rocking curve full width half maximum (RCFWHM) not exceeding 2.5°.
摘要翻译：本发明的目的是提供一种高性能压电元件，其通过从W层形成底部电极而不间断地形成不具有超高c轴取向的小丘，裂纹和剥离的氮化铝薄膜粘合剂层在玻璃或其他便宜的基材上。本发明的压电元件是使用超高取向氮化铝薄膜的压电元件，其特征在于，压电元件没有小丘，裂纹和剥离，并且包括堆叠结构，其中底部电极，压电体薄膜和顶电极依次形成在基板上; 底部电极由取向的W层制成，其中W（111）面平行于衬底的表面; 并且压电体薄膜由具有不超过2.5°的摇摆曲线全宽半最大值（RCFWHM）的c轴取向氮化铝薄膜形成。

5. 发明申请

US20050236710A1 Piezoelectric device comprising ultrahighly-orientated aluminum nitride thin film and its manufacturing method 失效
标题翻译：包含超高取向氮化铝薄膜的压电器件及其制造方法
公开(公告)号：US20050236710A1
公开(公告)日：2005-10-27
申请号：US10516333
申请日：2003-05-29
申请人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Yoshitaka Sunagawa , Yoshihiro Umeuchi , Keiichiro Jinushi
发明人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Yoshitaka Sunagawa , Yoshihiro Umeuchi , Keiichiro Jinushi
IPC分类号： C23C14/34 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/29 , H01L41/316 , H01L21/28 , H01L23/52
CPC分类号： H01L41/316 , Y10T29/42
摘要： The present invention has an objective to provide a high performance piezoelectric element in which is formed an aluminum nitride thin film free from hillocks, cracks, and peeling which exhibits superhigh c-axis orientation, by forming a bottom electrode from a W layer with no intervening adhesive layer on a glass or other cheap substrate. The piezoelectric element of the present invention is a piezoelectric element using a superhigh-oriented aluminum nitride thin film characterized in that the piezoelectric element is free from hillocks, cracks, and peeling and includes a stack structure in which a bottom electrode, a piezoelectric body thin film, and a top electrode are sequentially formed on a substrate; the bottom electrode is made of an oriented W layer of which a (111) plane of W is parallel to a surface of the substrate; and the piezoelectric body thin film is formed of a c-axis-oriented aluminum nitride thin film having a rocking curve full width half maximum (RCFWHM) not exceeding 2.5°.
摘要翻译：本发明的目的是提供一种高性能压电元件，其通过从W层形成底部电极而不间断地形成不具有超高c轴取向的小丘，裂纹和剥离的氮化铝薄膜粘合剂层在玻璃或其他便宜的基材上。本发明的压电元件是使用超高取向氮化铝薄膜的压电元件，其特征在于，压电元件没有小丘，裂纹和剥离，并且包括堆叠结构，其中底部电极，压电体薄膜和顶电极依次形成在基板上; 底部电极由取向的W层制成，其中W（111）面平行于衬底的表面; 并且压电体薄膜由具有不超过2.5°的摇摆曲线全宽半最大值（RCFWHM）的c轴取向氮化铝薄膜形成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式