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1. 发明申请

US20120329290A1 Substrate Placement Stage, Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device 审中-公开
标题翻译：基板放置阶段，基板处理装置及制造半导体装置的方法
公开(公告)号：US20120329290A1
公开(公告)日：2012-12-27
申请号：US13479441
申请日：2012-05-24
申请人： Toshiya Shimada , Kazuhiro Shimeno , Masakazu Sakata , Hidehiro Yanai , Tomihiro Amano , Yuichi Wada
发明人： Toshiya Shimada , Kazuhiro Shimeno , Masakazu Sakata , Hidehiro Yanai , Tomihiro Amano , Yuichi Wada
IPC分类号： B05C13/02 , H01L21/324
CPC分类号： H01L21/6719 , H01L21/67781 , H01L21/68757
摘要： Provided is a substrate placement stage or substrate processing apparatus which can suppress thermal deformation of the substrate placement stage when the substrate placement stage on which a substrate is placed is heated in a process chamber. The substrate placement stage includes: a heating element; a first member surrounding the heating element; and a second member covering a surface of the first member and including a placing surface for placing a substrate thereon, wherein the first member is made of a first material containing ceramics and aluminum, and the second member is made of a second material containing ceramics and aluminum, a content of the ceramics in the second material being lower than that of the first material.
摘要翻译：提供了当在处理室中加热放置基板的基板放置台时，可以抑制基板放置台的热变形的基板放置台或基板处理装置。基板放置台包括：加热元件; 围绕所述加热元件的第一构件; 以及第二构件，其覆盖所述第一构件的表面并且包括用于在其上放置衬底的放置表面，其中所述第一构件由包含陶瓷和铝的第一材料制成，并且所述第二构件由包含陶瓷的第二材料制成，铝，第二材料中的陶瓷的含量低于第一材料的含量。

2. 发明授权

US5669644A Wafer transfer plate 失效
标题翻译：晶圆转印板
公开(公告)号：US5669644A
公开(公告)日：1997-09-23
申请号：US557409
申请日：1995-11-13
申请人： Hideki Kaihotsu , Kazuhiro Shimeno , Kouji Tometsuka
发明人： Hideki Kaihotsu , Kazuhiro Shimeno , Kouji Tometsuka
IPC分类号： H01L21/687 , B25J15/00
CPC分类号： H01L21/68707 , Y10S294/902 , Y10S414/141
摘要： A wafer transfer plate adapted to be disposed on a wafer transfer unit for transferring a wafer within a wafer manufacturing system, which comprises at least one wafer contact portion designed to be held in contact with the wafer as the wafer transfer plate is loaded with the wafer, a coated film being formed of a material which does not contain harmful elements and provided at a region including the wafer contact portion.
摘要翻译：一种晶片传送板，其适于设置在晶片传送单元上，用于在晶片制造系统内传送晶片，晶片制造系统包括至少一个晶片接触部分，该晶片接触部分被设计为当晶片传送板装载晶片时被保持与晶片接触涂覆膜由不含有害元素的材料形成，并且设置在包括晶片接触部分的区域。

3. 发明授权

US4710604A Machining apparatus with laser beam 失效
标题翻译：激光加工设备
公开(公告)号：US4710604A
公开(公告)日：1987-12-01
申请号：US942730
申请日：1986-12-17
申请人： Hiroshi Shirasu , Kazuhiro Shimeno , Joji Iwamoto
发明人： Hiroshi Shirasu , Kazuhiro Shimeno , Joji Iwamoto
IPC分类号： B23K26/02 , B23K26/08
CPC分类号： B23K26/0853 , B23K26/042
摘要： Proposed is a machining apparatus with a laser beam, wherein a stage is controlled and driven to cause a target to come close to a beam spot when the target is located far away from the beam spot, and a laser beam radiation system is controlled and driven to cause the beam spot to come closer to the target when the target is located within a predetermined range with respect to the beam spot.
摘要翻译：提出了一种具有激光束的加工装置，其中当靶远离束斑位置时，控制和驱动载物台以使目标靠近波束点，激光束辐射系统被控制和驱动当目标位于相对于光束点的预定范围内时，使光点变得更靠近目标。

4. 发明申请

US20060075972A1 Substrate processing apparatus and substrate processing method 审中-公开
公开(公告)号：US20060075972A1
公开(公告)日：2006-04-13
申请号：US11258670
申请日：2005-10-25
申请人： Seiyo Nakashima , Michiko Nishiwaki , Yukinori Aburatani , Satoshi Okada , Eisuke Nishitani , Kazuhiro Nakagomi , Kazuhito Ikeda , Kazuhiro Shimeno , Gakuji Ohta , Katsuhisa Kasanami
发明人： Seiyo Nakashima , Michiko Nishiwaki , Yukinori Aburatani , Satoshi Okada , Eisuke Nishitani , Kazuhiro Nakagomi , Kazuhito Ikeda , Kazuhiro Shimeno , Gakuji Ohta , Katsuhisa Kasanami
IPC分类号： C23C16/00
CPC分类号： H01L21/68721 , C23C16/4584 , C23C16/46 , H01J2237/2005 , H01J2237/32 , H01L21/67109 , H01L21/68742 , H01L21/68785 , H01L21/68792
摘要： A substrate processing apparatus comprises a processing chamber; a susceptor on which a substrate to be processed is to be placed; and a heating unit disposed below the susceptor for heating the substrate to be processed placed on the susceptor. The susceptor and the heating unit are accommodated in the processing chamber, and in a state in which the susceptor and the heating unit are relatively rotated, the substrate to be processed is processed. At least the susceptor is lifted and lowered in the processing chamber, and a substrate to be processed lifting and lowering apparatus for lifting and lowering the substrate to be processed with respect to at least a portion of the susceptor is disposed in the processing chamber.

5. 发明授权

US06318944B1 Semiconductor fabricating apparatus, method for modifying positional displacement of a wafer in a wafer cassette within the semiconductor fabricating apparatus and method for transferring the wafer cassette 失效
标题翻译：半导体制造装置，用于修改半导体制造装置内的晶片盒中的晶片的位置偏移的方法和用于传送晶片盒的方法
公开(公告)号：US06318944B1
公开(公告)日：2001-11-20
申请号：US08659021
申请日：1996-06-04
申请人： Kazuhiro Shimeno , Kouji Tometsuka , Shigeo Ohba
发明人： Kazuhiro Shimeno , Kouji Tometsuka , Shigeo Ohba
IPC分类号： G01P1300
CPC分类号： H01L21/67769 , Y10S414/136 , Y10S414/137 , Y10S414/139 , Y10S414/14
摘要： A semiconductor fabricating apparatus having a vertical reaction furnace, a boat for holding plural wafers in a multi-layered fashion and being loaded into the vertical reaction furnace, a storage disposed at a location corresponding to the boat for storing at least one of the wafer cassettes, a wafer transfer device for transferring the wafer between the storage and the boat, a cassette transfer unit for transferring the wafer cassettes between the apparatus and outside thereof, a cassette transfer device for effecting the transfer of the wafer cassettes between the cassette transfer unit and the storage, and a plurality of cassette shelves disposed within a range allowing transfer of the wafer cassettes from the cassette transfer device for receiving the wafer cassettes in upwardly-oriented positions. With the apparatus thus arranged, it becomes possible to modify the positional displacement of the wafer relative to the wafer cassettes since the wafer cassettes can be transported on to the cassette shelves in upwardly-oriented positions.
摘要翻译：一种半导体制造装置，具有垂直反应炉，用于以多层方式保持多个晶片并装载到垂直反应炉中的船，设置在对应于船的位置处的存储器，用于存储至少一个晶片盒，用于在所述存储器和所述船之间传送所述晶片的晶片传送装置，用于在所述装置和其外部之间传送所述晶片盒的盒传送单元，用于在所述盒传送单元和所述盒传送单元之间进行所述晶片盒的传送的盒传送装置; 存储器和多个盒式搁架，其设置在允许从盒式传送装置传送晶片盒的范围内，用于将晶片盒接收在朝上的位置。利用如此布置的装置，可以改变晶片相对于晶片盒的位置位移，因为晶片盒可以向上取向的位置传送到盒式货架。

6. 发明授权

US5960159A Heat treatment of semiconductor wafers where upper heater directly heats upper wafer in its entirety and lower heater directly heats lower wafer in its entirety 失效
标题翻译：半导体晶片的热处理，其中上加热器直接加热整个上晶片，下加热器直接加热下晶片
公开(公告)号：US5960159A
公开(公告)日：1999-09-28
申请号：US950185
申请日：1997-10-14
申请人： Fumihide Ikeda , Junichi Machida , Masayuki Tomita , Yasuhiro Inokuchi , Kazuhiro Shimeno , Hisashi Nomura , Tetsuaki Inada
发明人： Fumihide Ikeda , Junichi Machida , Masayuki Tomita , Yasuhiro Inokuchi , Kazuhiro Shimeno , Hisashi Nomura , Tetsuaki Inada
IPC分类号： H01L21/00 , F26B3/30
CPC分类号： H01L21/67109
摘要： A substrate processing apparatus includes a substrate supporting pedestal having an upper substrate supporting pedestal and a lower substrate supporting pedestal which are vertically stacked, an upper resistance heater provided above the upper substrate supporting pedestal so as to be opposite to the upper substrate supporting pedestal, and a lower resistance heater provided under the lower substrate supporting pedestal so as to be opposite to the lower substrate supporting pedestal. Each of the upper substrate supporting pedestal and the lower substrate supporting pedestal is capable of mounting a substrate or substrates in a substantially horizontal position, and the lower substrate supporting pedestal including an opening which exposes the substrate in its entirety or openings which expose the substrates in their entireties as viewed from under the lower substrate supporting pedestal.
摘要翻译：基板处理装置包括：具有上基板支撑基座的基板支撑基座和垂直堆叠的下基板支撑基座;上电阻加热器，设置在上基板支撑基座的上方，以与上基板支撑基座相对;以及设置在下基板支撑基座下方以与下基板支撑基座相对的下电阻加热器。上基板支撑基座和下基板支撑基座中的每一个能够将基板或基板安装在基本水平的位置，并且下基板支撑基座包括将基板全部曝光的开口或露出基板的开口它们的整体从下基板支撑底座下方观察。

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