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    • 8. 发明授权
    • Photo detector
    • 光电探测器
    • US07821091B2
    • 2010-10-26
    • US12325195
    • 2008-11-29
    • Matthias FertigNikolaj MollThomas E. MorfThomas PfluegerJonas R. Weiss
    • Matthias FertigNikolaj MollThomas E. MorfThomas PfluegerJonas R. Weiss
    • H01L31/052
    • H01L27/1446H01L31/02327
    • A photo detector comprising a grating (PC). The grating (PC) is arranged on top of a surface of an active semiconductor layer. The grating (PC) is patterned in uninterrupted first strips (ST1), that are arranged in a first direction (x) in a first predetermined interval (a), and second strips (ST2), that are arranged in a second direction (y) in a second predetermined interval (b). The second strips (ST2) each comprise at least one interruption in a region between each two neighboring first strips (ST1) in form of a predetermined gap (d). Positively doped regions (P) and negatively doped regions (N) each are arranged as strips in parallel with the first strips (ST1) such that in a region between each two neighboring first strips (ST1) alternately either one of the positively doped regions (P) or one of the negatively doped regions (N) is arranged.
    • 一种光电检测器,包括光栅(PC)。 光栅(PC)布置在有源半导体层的表面的顶部。 在不间断的第一条带(ST1)中以第一预定间隔(a)中的第一方向(x)布置光栅(PC),并且沿第二方向(y )在第二预定间隔(b)中。 第二条带(ST2)各自包括形成预定间隙(d)的每个两个相邻的第一条带(ST1)之间的区域中的至少一个中断。 正掺杂区域(P)和负掺杂区域(N)各自被布置为与第一条带(ST1)平行的条带,使得在每两个相邻的第一条带(ST1)之间的区域中交替地将任一个正掺杂区域 P)或负掺杂区域(N)之一。