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1. 发明授权

US06368983B1 Multi-layer wafer fabrication 有权
标题翻译：多层晶圆制造
公开(公告)号：US06368983B1
公开(公告)日：2002-04-09
申请号：US09291577
申请日：1999-04-09
申请人： William E. Hoke , Peter S. Lyman , John J. Mosca
发明人： William E. Hoke , Peter S. Lyman , John J. Mosca
IPC分类号： H01L2131
CPC分类号： H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/0256 , H01L21/02631 , H01L21/02658
摘要： The invention provides a method of fabricating a wafer including growing a single crystal layer comprising a III-V compound in a first chamber at a temperature above 350° C. A temperature of a surface of the single crystal layer is reduced to below about 350° C. in the first chamber. An indium arsenide layer is deposited on the single crystal layer, to form an intermediate structure, in the first chamber at a temperature below 350° C. and above 100° C. The intermediate structure is transferred to a second chamber. A surface of the intermediate structure is heated to a temperature above about 600° C. to remove substantially all of the indium arsenide layer and impurities collected in the indium arsenide layer during the transfer to the second chamber. Another material is deposited on the single crystal layer in the second chamber.
摘要翻译：本发明提供了一种制造晶片的方法，包括在第一室中在350℃以上的温度下生长包含III-V族化合物的单晶层。单晶层表面的温度降低至约350° C.在第一个房间。在第一室中，在低于350℃和高于100℃的温度下，在单晶层上沉积砷化铟层以形成中间结构。将中间结构转移到第二室。将中间结构的表面加热到高于约600℃的温度，以在转移到第二室期间去除基本上所有的砷化铟层和在砷化铟层中收集的杂质。另一种材料沉积在第二室中的单晶层上。

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