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1. 发明授权

US07666752B2 Deposition method for a transition-metal-containing dielectric 失效
标题翻译：含过渡金属的电介质的沉积方法
公开(公告)号：US07666752B2
公开(公告)日：2010-02-23
申请号：US11655583
申请日：2007-01-19
申请人： Stephan Kudelka , Lars Oberbeck , Uwe Schroeder , Tim Boescke , Johannes Heitmann , Annette Saenger , Joerg Schumann , Elke Erben
发明人： Stephan Kudelka , Lars Oberbeck , Uwe Schroeder , Tim Boescke , Johannes Heitmann , Annette Saenger , Joerg Schumann , Elke Erben
IPC分类号： H01L21/20
CPC分类号： H01L21/02181 , H01G4/10 , H01G4/33 , H01L21/02189 , H01L21/3141 , H01L21/31641 , H01L21/31645 , H01L27/10852 , H01L28/65
摘要： The present invention relates to a method for depositing a dielectric material comprising a transition metal compound. After providing a substrate, a first pre-cursor comprising a transition metal compound and a second pre-cursor predominantly comprising at least one of water vapour, ammonia and hydrazine are successively applied on the substrate for forming a first layer of transition metal containing material. In a next step the first pre-cursor and a third pre-cursor comprising at least one of ozone and oxygen are successively applied on the first layer for forming a second layer of the transition metal containing material.
摘要翻译：本发明涉及沉积包含过渡金属化合物的电介质材料的方法。在提供衬底之后，在衬底上依次施加包含过渡金属化合物的第一前体和主要包含水蒸汽，氨和肼中的至少一种的第二前体，形成含第一层含过渡金属的材料。在下一步骤中，在第一层上依次施加包含臭氧和氧气中的至少一种的第一前视标和第三前标，以形成含过渡金属的材料的第二层。

2. 发明申请

US20080191197A1 Semiconductor Arrangement Having a Resistive Memory 审中-公开
公开(公告)号：US20080191197A1
公开(公告)日：2008-08-14
申请号：US11572951
申请日：2005-07-21
申请人： Andreas Walter , Recai Sezi , Reimund Engl , Anna Maltenberger , Joerg Schumann , Thomas Weitz
发明人： Andreas Walter , Recai Sezi , Reimund Engl , Anna Maltenberger , Joerg Schumann , Thomas Weitz
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L51/0052 , B82Y10/00 , G11C13/0014 , H01B1/121 , H01L27/11502 , H01L27/285 , H01L51/0036 , H01L51/0051
摘要： A memory cell reversibly switchable between different stable electrical resistance states, the memory cell having a first electrode and a second electrode and an active layer arranged between the first and the second electrode, the active layer including a compound represented by general formula , wherein R1 and R2 are independently selected from —H, —(CH2)mCH3, -phenyl, —O—(CH2)mCH3, —O-phenyl, —S(CH2)mCH3, —S-aryl, —NR3R4, —SR3 and -halogen; R1 and R2 may together form a ring; R5 and R6 are independently selected from —H, -alkyl, -aryl and -heteroaryl; m is either 0 or an integer ranging from 1 to 10; n is an integer ranging from 2 to 1000; and a compound represented by general formula wherein R7, R8, R9, R10, R11, R12, R13, and R14 are independently selected from the group consisting of —H, —(CH2)mCH3, -phenyl, —O—(CH2)mCH3, —O-phenyl, —CO(CH2)mCH3, -halogen, —CN and —NO2; R7 and R8 may together form a ring; R8 and R9 may together form a ring; R9 and R10 may together form a ring; R11 and R12 may together form a ring; R12 and R13 may together form a ring; and R13 and R14 may together form a ring.Furthermore, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.

3. 发明授权

US07238964B2 Memory cell, method for the production thereof and use of a composition therefor 有权
标题翻译：记忆单元，其制造方法和其组合物的使用
公开(公告)号：US07238964B2
公开(公告)日：2007-07-03
申请号：US11044762
申请日：2005-01-27
申请人： Andreas Walter , Recai Sezi , Reimund Engl , Anna Maltenberger , Joerg Schumann , Thomas Weitz
发明人： Andreas Walter , Recai Sezi , Reimund Engl , Anna Maltenberger , Joerg Schumann , Thomas Weitz
IPC分类号： H01L29/04 , H01L31/20 , H01L33/00
CPC分类号： H01L51/0595 , B82Y10/00 , G11C13/0014 , G11C13/0016 , H01L27/285 , H01L51/0051
摘要： A memory cell is provided which comprises two electrodes and a layer arranged in between and comprising an active material comprising (a) a compound selected from the group consisting of in which R1 and R4, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R1 and R2, R2 and R3, R3 and R4 together may form a ring, (b) a compound of the general formula II: in which R5 to R7, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —NH2, —N(alkyl)2, —N(aryl)2, —N(heteroaryl)2, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R5 and R6 or R7 and R8 together may form a ring, and optionally (c) a polymer. A method for the production of the cells according to the invention and the novel use of a composition which can be used as active material for the memory cells are furthermore provided.
摘要翻译：提供了一种存储单元，其包括两个电极和布置在其间并包含活性材料的层，所述活性材料包含（a）选自下组的化合物：其中R 1和R 2，可以具有以下含义：-H， - 烷基， - 芳基， - 杂芳基，-O-烷基，-O-芳基， - O-杂芳基，-SH - ， - S-烷基， -S-芳基，-S-杂芳基，-CO-烷基，-CO-芳基，-CO-杂芳基，-CS-烷基，-CS-芳基，-CS-杂芳基， - 卤素，-CN和/或-NO 其中R 1和R 2，R 2和R 3， R 3和R 4一起可以形成环，（b）通式II的化合物：其中R 5至R 可以具有如下含义：-H， - 烷基， - 芳基， - 杂芳基， - - - 烷基，-O-芳基， - O-杂芳基， N（烷基）2，-N（芳基）2 N，-N（杂芳基）2， -SH，-S-烷基，-S-芳基，-S-杂芳基，-CO-烷基，-CO-芳基，-CO-杂芳基，-CS-烷基，-CS-芳基，-CS-杂芳基， - 卤素，-CN和/或-NO 2，其中R 5 和R 6或R 7和R 8一起可以形成环，和任选地（c）聚合物。此外还提供了用于生产根据本发明的电池的方法和可用作存储器电池的活性材料的组合物的新用途。

4. 发明申请

US20050186737A1 Resistive memory for low-voltage applications 失效
标题翻译：低电压应用的电阻式存储器
公开(公告)号：US20050186737A1
公开(公告)日：2005-08-25
申请号：US11041760
申请日：2005-01-24
申请人： Recai Sezi , Andreas Walter , Reimund Engl , Anna Maltenberger , Joerg Schumann , Thomas Weitz
发明人： Recai Sezi , Andreas Walter , Reimund Engl , Anna Maltenberger , Joerg Schumann , Thomas Weitz
IPC分类号： C09K11/06 , G11C13/02 , H01L21/8242 , H01L27/28 , H01L51/00
CPC分类号： H01L51/0051 , B82Y10/00 , G11C13/0014 , G11C13/0016 , H01L27/285 , H01L51/005 , H01L51/0595
摘要： Memory cells having two electrodes and a layer arranged in between and including an active material which contains hexakisbenzylthiobenzene, dichlorodicyano-p-benzoquinone and optionally a polymer are provided. Furthermore, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.
摘要翻译：提供具有两个电极和布置在其中并包含含有六苯基苯硫基苯，二氯二氰基对苯醌和任选的聚合物的活性材料的层的记忆单元。此外，提供了根据本发明的细胞的制备方法，以及可用作记忆单元的活性材料的组合物的新用途。

5. 发明申请

US20060237716A1 Material and cell structure for storage applications 审中-公开
标题翻译：存储应用的材料和单元格结构
公开(公告)号：US20060237716A1
公开(公告)日：2006-10-26
申请号：US11392238
申请日：2006-03-29
申请人： Recai Sezi , Andreas Walter , Reimund Engl , Anna Maltenberger , Joerg Schumann
发明人： Recai Sezi , Andreas Walter , Reimund Engl , Anna Maltenberger , Joerg Schumann
IPC分类号： H01L29/08 , H01L51/00 , C07D409/04 , H01L21/20
CPC分类号： H01L51/0595 , B82Y10/00 , H01L51/0051
摘要： The present invention relates to compositions for storage applications, relates to a memory cell which comprises the abovementioned composition and two electrodes and furthermore relates to a process for the production of microelectronic components and the use of the composition according to the invention in the production of these microelectronic components.
摘要翻译：本发明涉及用于存储应用的组合物，涉及一种包含上述组合物和两个电极的存储单元，此外还涉及一种用于生产微电子组件的方法以及根据本发明的组合物在制备这些组合物中的用途微电子元件。

6. 发明申请

US20120067276A1 EQUIPMENT TO DEPOSIT A FLUID SUBSTANCE ON BAKED GOODS 审中-公开
标题翻译：储存液体物质的设备
公开(公告)号：US20120067276A1
公开(公告)日：2012-03-22
申请号：US13234219
申请日：2011-09-16
申请人： Joerg SCHUMANN
发明人： Joerg SCHUMANN
IPC分类号： B05C5/00 , B05C11/11 , B05C13/00 , B05C11/00
CPC分类号： A21C15/002
摘要： Equipment for depositing a fluid deposition substance onto baked goods, comprises a reservoir for the fluid deposition substance. a deposition unit to deposit the fluid deposition substance onto the baked goods, a feed means to feed the fluid deposition substance from the reservoir into the deposition unit, a conveyor configured underneath the depositing unit to convey the baked goods relative to the deposition unit along one direction of conveyance, a collecting unit situated underneath the conveyor to collect excess deposition substance that was not received on the baked goods, and a temperature controller allowing to temperature-control the equipment at least in segments. The conveyor is fitted with substantially bar-shaped baked-goods support elements which are configured mutually spaced apart in the direction of conveyance (R1) and in a direction (R2) transverse to the direction (R1).
摘要翻译：用于将流体沉积物质沉积在烘焙食品上的设备包括用于流体沉积物质的储存器。用于将流体沉积物质沉积到烘焙食品上的沉积单元，用于将流体沉积物质从贮存器供给到沉积单元中的进料装置;配置在沉积单元下方的输送器，用于沿着一个传送方向，位于输送机下方的收集单元，以收集未被接收在烘焙食品上的过量沉积物质;以及温度控制器，其允许至少对片段进行温度控制。输送机配有基本上条形的烘烤食品支撑元件，它们在输送方向（R1）和横向于（R1）的方向（R2）上相互间隔开。

7. 发明申请

US20080142774A1 Integrated Circuit Having Resistive Memory 审中-公开
标题翻译：具有电阻记忆的集成电路
公开(公告)号：US20080142774A1
公开(公告)日：2008-06-19
申请号：US11572950
申请日：2005-07-20
申请人： Andreas Walter , Thomas Weitz , Reimund Engl , Recai Sezi , Anna Maltenberger , Joerg Schumann
发明人： Andreas Walter , Thomas Weitz , Reimund Engl , Recai Sezi , Anna Maltenberger , Joerg Schumann
IPC分类号： H01L45/00 , H01L51/40 , H01L51/30
CPC分类号： H01L27/285 , B82Y10/00 , G11C13/0014 , G11C13/0016 , H01L51/0035 , H01L51/0051 , H01L51/0074 , H01L51/0591 , H01L51/0595
摘要： An integrated circuit having resistive memory is disclosed. In one embodiment, the memory includes novel memory cells which have two electrodes and a layer arranged in between and including an active material which contains [1,2]dithiolo[4,3-[c]-1,2-dithiol-3,6-dithione, (2,4,7-trinitro-9-fluorenylidene)malonodinitrile and a polymer are disclosed. In one embodiment, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.
摘要翻译：公开了一种具有电阻性存储器的集成电路。在一个实施例中，存储器包括新颖的存储单元，其具有两个电极和布置在其中并且包括含有[1,2]二硫基[4,3-c] -1,2-二硫醇-3的活性材料的层，（2,4,7-三硝基-9-亚芴基）丙二腈和聚合物。在一个实施方案中，提供了根据本发明的细胞的制备方法，以及可用作记忆细胞的活性物质的组合物的新用途。

8. 发明授权

US07211856B2 Resistive memory for low-voltage applications 失效
标题翻译：低电压应用的电阻式存储器
公开(公告)号：US07211856B2
公开(公告)日：2007-05-01
申请号：US11041760
申请日：2005-01-24
申请人： Recai Sezi , Andreas Walter , Reimund Engl , Anna Maltenberger , Joerg Schumann , Thomas Weitz
发明人： Recai Sezi , Andreas Walter , Reimund Engl , Anna Maltenberger , Joerg Schumann , Thomas Weitz
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L51/0051 , B82Y10/00 , G11C13/0014 , G11C13/0016 , H01L27/285 , H01L51/005 , H01L51/0595
摘要： Memory cells having two electrodes and a layer arranged in between and including an active material which contains hexakisbenzylthiobenzene, dichlorodicyano-p-benzoquinone and optionally a polymer are provided. Furthermore, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.
摘要翻译：提供具有两个电极和布置在其中并包含含有六苯基苯硫基苯，二氯二氰基对苯醌和任选的聚合物的活性材料的层的记忆单元。此外，提供了根据本发明的细胞的制备方法，以及可用作记忆单元的活性材料的组合物的新用途。

9. 发明申请

US20050179033A1 Memory cell, method for the production thereof and use of a composition therefor 有权
标题翻译：记忆单元，其制造方法和其组合物的使用
公开(公告)号：US20050179033A1
公开(公告)日：2005-08-18
申请号：US11044762
申请日：2005-01-27
申请人： Andreas Walter , Recai Sezi , Reimund Engl , Anna Maltenberger , Joerg Schumann , Thomas Weitz
发明人： Andreas Walter , Recai Sezi , Reimund Engl , Anna Maltenberger , Joerg Schumann , Thomas Weitz
IPC分类号： C07C211/50 , C07D345/00 , G11C11/21 , G11C13/00 , G11C13/02 , H01L27/24 , H01L27/28 , H01L29/08 , H01L35/24 , H01L51/30
CPC分类号： H01L51/0595 , B82Y10/00 , G11C13/0014 , G11C13/0016 , H01L27/285 , H01L51/0051
摘要： A memory cell is provided which comprises two electrodes and a layer arranged in between and comprising an active material comprising (a) a compound selected from the group consisting of in which R1 and R4, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R1 and R2, R2 and R3, R3 and R4 together may form a ring, (b) a compound of the general formula II: in which R5 to R7, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —NH2, —N(alkyl)2, —N(aryl)2, —N(heteroaryl)2, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R5 and R6 or R7 and R8 together may form a ring, and optionally (c) a polymer. A method for the production of the cells according to the invention and the novel use of a composition which can be used as active material for the memory cells are furthermore provided.
摘要翻译：提供了一种存储单元，其包括两个电极和布置在其间并包含活性材料的层，所述活性材料包含（a）选自下组的化合物：其中R 1和R 2，可以具有以下含义：-H， - 烷基， - 芳基， - 杂芳基，-O-烷基，-O-芳基， - O-杂芳基，-SH - ， - S-烷基， -S-芳基，-S-杂芳基，-CO-烷基，-CO-芳基，-CO-杂芳基，-CS-烷基，-CS-芳基，-CS-杂芳基， - 卤素，-CN和/或-NO 其中R 1和R 2，R 2和R 3， R 3和R 4一起可以形成环，（b）通式II的化合物：其中R 5至R 可以具有如下含义：-H， - 烷基， - 芳基， - 杂芳基， - - - 烷基，-O-芳基， - O-杂芳基， N（烷基）2，-N（芳基）2 N，-N（杂芳基）2， -SH，-S-烷基，-S-芳基，-S-杂芳基，-CO-烷基，-CO-芳基，-CO-杂芳基，-CS-烷基，-CS-芳基，-CS-杂芳基， - 卤素，-CN和/或-NO 2，其中R 5 和R 6或R 7和R 8一起可以形成环，和任选地（c）聚合物。此外还提供了用于生产根据本发明的电池的方法和可用作存储器电池的活性材料的组合物的新用途。

10. 发明申请

US20080173919A1 Deposition method for a transition-metal-containing dielectric 失效
标题翻译：含过渡金属的电介质的沉积方法
公开(公告)号：US20080173919A1
公开(公告)日：2008-07-24
申请号：US11655583
申请日：2007-01-19
申请人： Stephan Kudelka , Lars Oberbeck , Uwe Schroeder , Tim Boescke , Johannes Heitmann , Annette Saenger , Joerg Schumann , Elke Erben
发明人： Stephan Kudelka , Lars Oberbeck , Uwe Schroeder , Tim Boescke , Johannes Heitmann , Annette Saenger , Joerg Schumann , Elke Erben
IPC分类号： G11C11/24 , B05D5/12 , H01G9/00
CPC分类号： H01L21/02181 , H01G4/10 , H01G4/33 , H01L21/02189 , H01L21/3141 , H01L21/31641 , H01L21/31645 , H01L27/10852 , H01L28/65
摘要： The present invention relates to a method for depositing a dielectric material comprising a transition metal compound. After providing a substrate, a first pre-cursor comprising a transition metal compound and a second pre-cursor predominantly comprising at least one of water vapour, ammonia and hydrazine are successively applied on the substrate for forming a first layer of transition metal containing material. In a next step the first pre-cursor and a third pre-cursor comprising at least one of ozone and oxygen are successively applied on the first layer for forming a second layer of the transition metal containing material.
摘要翻译：本发明涉及沉积包含过渡金属化合物的电介质材料的方法。在提供衬底之后，在衬底上依次施加包含过渡金属化合物的第一前体和主要包含水蒸汽，氨和肼中的至少一种的第二前体，形成含第一层含过渡金属的材料。在下一步骤中，在第一层上依次施加包含臭氧和氧气中的至少一种的第一前视标和第三前标，以形成含过渡金属的材料的第二层。

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