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1. 发明授权

US07397634B2 Magnetic head coil system and damascene/reactive ion etching method for manufacturing the same 失效
公开(公告)号：US07397634B2
公开(公告)日：2008-07-08
申请号：US10602462
申请日：2003-06-23
申请人： Daniel Wayne Bedell , Richard Hsiao , James D. Jarratt , Patrick Rush Webb , Sue Siyang Zhang
发明人： Daniel Wayne Bedell , Richard Hsiao , James D. Jarratt , Patrick Rush Webb , Sue Siyang Zhang
IPC分类号： G11B5/17
CPC分类号： G11B5/313 , G11B5/3123 , G11B5/3163 , Y10T29/49021 , Y10T29/49032 , Y10T29/4906 , Y10T29/49064 , Y10T29/49073
摘要： A system and method are provided for manufacturing a coil structure for a magnetic head. Initially, an insulating layer is deposited with a photoresist layer deposited on the insulating layer. Moreover, a silicon dielectric layer is deposited on the photoresist layer as a hard mask. The silicon dielectric layer is then masked. A plurality of channels is subsequently formed in the silicon dielectric layer using reactive ion etching (i.e. CF4/CHF3). The silicon dielectric layer is then used as a hard mask to transfer the channel pattern in the photoresist layer using reactive ion etching with, for example, H2/N2/CH3F/C2H4 reducing chemistry. To obtain an optimal channel profile with the desired high aspect ratio, channel formation includes a first segment defining a first angle and a second segment defining a second angle. Thereafter, a conductive seed layer is deposited in the channels and the channels are filled with a conductive material to define a coil structure. Chemical-mechanical polishing may then be used to planarize the conductive material.

2. 发明授权

US07108796B2 Method for fabrication of magnetic write head with self aligned poles 失效
标题翻译：具有自对准极的磁性写头的制造方法
公开(公告)号：US07108796B2
公开(公告)日：2006-09-19
申请号：US10676466
申请日：2003-09-30
申请人： Christopher W. Bergevin , James D. Jarratt , Jyh-Shuey Jerry Lo , Sue Siyang Zhang
发明人： Christopher W. Bergevin , James D. Jarratt , Jyh-Shuey Jerry Lo , Sue Siyang Zhang
IPC分类号： G11B5/127 , B44C1/22
CPC分类号： G11B5/187 , G11B5/232 , G11B5/3116 , G11B5/3163 , Y10T29/49043 , Y10T29/49046
摘要： A method for fabrication of magnetic write heads for disk drives in which a P1 layer is formed having a P1 Protrusion, the P1 Protrusion having a longitudinal reference axis. A gap layer is deposited on the P1 Protrusion and a layer of fill material is deposited on the gap layer. The fill material layer is shaped to form a mold which surrounds a hollow which is aligned with the longitudinal axis of the P1 Protrusion. This hollow in the fill material layer is filled with P2 pole material to form a P2 pole which is then automatically substantially aligned with the longitudinal axis of the P1 Protrusion.
摘要翻译：一种用于制造磁盘驱动器的写磁头的方法，其中形成具有P 1突起的P 1层，所述P 1突起具有纵向参考轴。间隙层沉积在P 1突起上，并且填充材料层沉积在间隙层上。填充材料层被成形为形成围绕与P 1突起的纵向轴线对准的中空部的模具。填充材料层中的该中空填充有P 2极材料，以形成P 2极，然后自动基本上与P 1突起的纵向轴线对齐。

3. 发明授权

US07233458B2 High magnetic moment Co-Fe-O-N films with soft magnetic properties 失效
标题翻译：具有软磁性能的高磁矩Co-Fe-O-N膜
公开(公告)号：US07233458B2
公开(公告)日：2007-06-19
申请号：US10242508
申请日：2002-09-11
申请人： Brian E. Brusca , Joel S. Forrest , Richard Hsiao , James D. Jarratt , Brian R. York
发明人： Brian E. Brusca , Joel S. Forrest , Richard Hsiao , James D. Jarratt , Brian R. York
IPC分类号： G11B5/147 , G11B5/66
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3109 , G11B5/312 , G11B5/313 , G11B5/3153 , G11B5/3163 , G11B5/3967 , G11B2005/3996 , H01F10/16 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T428/115 , Y10T428/32
摘要： A write element includes a first pole pedestal and a second pole pedestal opposing the first pole pedestal and defining a write gap between the first and second pole pedestals. A first layer of CoFeON is film positioned between the first pole pedestal and the write gap. A second layer of CoFeON film is positioned between the second pole pedestal and the write gap.
摘要翻译：写元件包括第一极基座和与第一极基座相对并且在第一和第二极基座之间限定写间隙的第二极基座。第一层CoFeON是位于第一极基座和写间隙之间的薄膜。第二层CoFeON膜位于第二极基座和写间隙之间。

4. 发明授权

US06678127B2 Device and method of reducing ESD damage in thin film read heads which enables measurement of gap resistances and method of making 失效
标题翻译：减薄薄膜读取头中的ESD损伤的装置和方法，能够测量间隙电阻和制作方法
公开(公告)号：US06678127B2
公开(公告)日：2004-01-13
申请号：US09753804
申请日：2001-01-02
申请人： Richard Hsiao , James D. Jarratt , Emo Hilbrand Klaassen , Ian Robson McFadyen , Timothy J. Moran
发明人： Richard Hsiao , James D. Jarratt , Emo Hilbrand Klaassen , Ian Robson McFadyen , Timothy J. Moran
IPC分类号： G11B540
CPC分类号： B82Y10/00 , G11B5/33 , G11B5/3967 , G11B5/40 , G11B5/455 , G11B33/10 , G11B2005/0013 , Y10T29/49032 , Y10T29/49036 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49071 , Y10T29/49073 , Y10T29/49078
摘要： A first read gap layer has a resistance RG1 between a first shield layer and one of the first and second lead layers of a read head and the second read gap layer has a resistance RG2 between a second shield layer and said one of the first and second lead layers of the read head. A connection is provided via a plurality of resistors between a first node and each of the first and second shield layers wherein the plurality of resistors includes at least first and second resistors RS1 and RS2 and the first node is connected to said one of the first and second lead layers. A second node is located between the first and second resistors RS1 and RS2. An operational amplifier has first and second inputs connected to the first and second nodes respectively so as to be across the first resistor RS1 and has an output connected to the first node for maintaining the first and second nodes at a common voltage potential. In a first embodiment the first and second shield layers are shorted together. A test instrument is then employed for determining the combined parallel resistance of the resistors RS1 and RS2 by having a first side of the test instrument connected to the first node and the second side connected to each of the first and second shield layers. In the second embodiment a third resistor RS3 is connected between the second node and one of the shield layers, such as the second shield layer. The test instrument can determine the resistances of the first and second gap layers separately by being connected between the first node and the first shield layer for the resistance of the first gap layer or between the first node and the second shield layer for the resistance of the second gap layer.
摘要翻译：第一读取间隙层在第一屏蔽层和读取头的第一和第二引线层中的一个之间具有电阻RG1，并且第二读取间隙层在第二屏蔽层和第一和第二引线之间的电阻RG2 读头的引导层。通过第一节点和第一和第二屏蔽层中的每一个之间的多个电阻器提供连接，其中多个电阻器至少包括第一和第二电阻器RS1和RS2，并且第一节点连接到第一和第二屏蔽层中的所述第一和第二屏蔽层第二铅层。第二节点位于第一和第二电阻器RS1和RS2之间。运算放大器具有分别连接到第一和第二节点的第一和第二输入，以跨过第一电阻器RS1并且具有连接到第一节点的输出，用于将第一和第二节点维持在共同的电压电位。在第一实施例中，第一和第二屏蔽层被短路在一起。然后通过使测试仪器的第一侧连接到第一节点并且第二侧连接到第一和第二屏蔽层中的每一个，然后采用测试仪器来确定电阻器RS1和RS2的组合并联电阻。在第二实施例中，第三电阻器RS3连接在第二节点和其中一个屏蔽层之间，例如第二屏蔽层。测试仪器可以通过连接在第一节点和第一屏蔽层之间来分别确定第一和第二间隙层的电阻，用于第一间隙层的电阻或第一节点和第二屏蔽层之间的电阻，第二间隙层。

5. 发明授权

US06944937B2 Method of reducing ESD damage in thin film read heads which enables measurement of gap resistance 失效
标题翻译：降低薄膜读取头中ESD损伤的方法，可测量间隙电阻
公开(公告)号：US06944937B2
公开(公告)日：2005-09-20
申请号：US10611623
申请日：2003-06-30
申请人： Richard Hsiao , James D. Jarratt , Emo Hilbrand Klaassen , Ian Robson McFadyen , Timothy J. Moran
发明人： Richard Hsiao , James D. Jarratt , Emo Hilbrand Klaassen , Ian Robson McFadyen , Timothy J. Moran
IPC分类号： G11B5/00 , G11B5/33 , G11B5/39 , G11B5/40 , G11B5/455 , G11B33/10 , G11B5/127 , H04R31/00
CPC分类号： B82Y10/00 , G11B5/33 , G11B5/3967 , G11B5/40 , G11B5/455 , G11B33/10 , G11B2005/0013 , Y10T29/49032 , Y10T29/49036 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49071 , Y10T29/49073 , Y10T29/49078
摘要： The present invention provides a method of manufacturing a magnetoresistive read head which reduces electrostatic discharge and allows measurement of gap resistances in the head.
摘要翻译：本发明提供一种制造磁阻读头的方法，其减少了静电放电并允许测量磁头中的间隙电阻。

6. 发明授权

US07703194B2 Method for creating write element having high magnetic moment Co-Fe-O-N film with soft magnetic properties 失效
标题翻译：用于产生具有高磁矩Co-Fe-O-N膜的具有软磁特性的写元件的方法
公开(公告)号：US07703194B2
公开(公告)日：2010-04-27
申请号：US11688168
申请日：2007-03-19
申请人： Brian E. Brusca , Joel S. Forrest , Richard Hsiao , James D. Jarratt , Brian R. York
发明人： Brian E. Brusca , Joel S. Forrest , Richard Hsiao , James D. Jarratt , Brian R. York
IPC分类号： G11B5/193
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3109 , G11B5/312 , G11B5/313 , G11B5/3153 , G11B5/3163 , G11B5/3967 , G11B2005/3996 , H01F10/16 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T428/115 , Y10T428/32
摘要： A method for creating a write element of a magnetic head according to one embodiment includes forming a first pole pedestal; forming a write gap layer above the first pole pedestal; forming a second pole pedestal above the write gap layer; and forming at least one of: a cap layer of CoFeON between the first pole pedestal and the write gap, and a seed layer of CoFeON between the write gap layer and the second pole pedestal. Note that other layers may be interspersed between those set forth here.
摘要翻译：根据一个实施例的用于产生磁头的写入元件的方法包括：形成第一极基座; 在所述第一极基座上形成写间隙层; 在所述写间隙层上方形成第二极基座; 以及在所述第一极基座和所述写间隙之间形成CoFeON的覆盖层和所述写间隙层和所述第二极基座之间的CoFeON晶种层中的至少一个。注意，其他层可以散布在这里列出的层之间。

7. 发明授权

US07380332B2 Magnetic head coil system and damascene/reactive ion etching method for manufacturing the same 失效
标题翻译：磁头线圈系统和镶嵌/反应离子蚀刻方法制造相同
公开(公告)号：US07380332B2
公开(公告)日：2008-06-03
申请号：US11040387
申请日：2005-01-20
申请人： Daniel Wayne Bedell , Richard Hsiao , James D. Jarratt , Patrick Rush Webb , Sue Siyang Zhang
发明人： Daniel Wayne Bedell , Richard Hsiao , James D. Jarratt , Patrick Rush Webb , Sue Siyang Zhang
IPC分类号： G11B5/17
CPC分类号： G11B5/313 , G11B5/3123 , G11B5/3163 , Y10T29/49021 , Y10T29/49032 , Y10T29/4906 , Y10T29/49064 , Y10T29/49073
摘要： A system and method are provided for manufacturing a coil structure for a magnetic head. Initially, an insulating layer is deposited with a photoresist layer deposited on the insulating layer. Moreover, a silicon dielectric layer is deposited on the photoresist layer as a hard mask. The silicon dielectric layer is then masked. A plurality of channels is subsequently formed in the silicon dielectric layer using reactive ion etching (i.e. CF4/CHF3). The silicon dielectric layer is then used as a hard mask to transfer the channel pattern in the photoresist layer using reactive ion etching with, for example, H2/N2/CH3F/C2H4 reducing chemistry. To obtain an optimal channel profile with the desired high aspect ratio, channel formation includes a first segment defining a first angle and a second segment defining a second angle. Thereafter, a conductive seed layer is deposited in the channels and the channels are filled with a conductive material to define a coil structure. Chemical-mechanical polishing may then be used to planarize the conductive material.
摘要翻译：提供一种用于制造用于磁头的线圈结构的系统和方法。首先，沉积有沉积在绝缘层上的光致抗蚀剂层的绝缘层。此外，硅介电层作为硬掩模沉积在光致抗蚀剂层上。然后掩蔽硅介电层。随后使用反应离子蚀刻（即CF 4 / CH 3）3在硅介电层中形成多个通道。然后将硅介电层用作硬掩模，以使用例如H 2/2 N 2 / CH的反应离子蚀刻将光致抗蚀剂层中的沟道图案转印还原化学反应。为了获得具有期望的高纵横比的最佳通道轮廓，通道形成包括限定第一角度的第一段和限定第二角度的第二段。此后，导电种子层沉积在通道中，并且通道填充有导电材料以限定线圈结构。然后可以使用化学机械抛光来平坦化导电材料。

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