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    • 4. 发明申请
    • IMPROVED OXIDE-BASED FIELD-EFFECT TRANSISTORS
    • 改进的基于氧化物的场效应晶体管
    • WO2008129238A1
    • 2008-10-30
    • PCT/GB2008/001298
    • 2008-04-11
    • IMPERIAL INNOVATIONS LIMITEDANTHOPOULOS, ThomasBRADLEY, Donal, Donat, ConorHAQUE, Saif, Ahmed
    • ANTHOPOULOS, ThomasBRADLEY, Donal, Donat, ConorHAQUE, Saif, Ahmed
    • H01L29/786
    • H01L29/7869G01N27/414H01L51/0533
    • A field-effect transistor comprising: a source region; a drain region; a semiconductor layer disposed between the source and drain regions; a gate region; and a dielectric region disposed between the semiconductor layer and the gate region; wherein the semiconductor layer comprises a titanium dioxide film. The transistor may be light sensing, gas- or bio-sensing, or used in a visual display or in electronic circuits. Also provided is a method of forming a field-effect transistor comprising: forming a dielectric layer adjacent a gate; forming a source region and a drain region; and forming a semiconductor layer on the dielectric layer, the semiconductor layer comprising titanium dioxide. The titanium dioxide semiconductor layer may be deposited by spray pyrolysis, or alternatively mesoporous TiO 2 films of nanocrystalline morphology may be formed by spin coating, doctor-blading or screen-printing techniques.
    • 一种场效应晶体管,包括:源极区; 漏区; 设置在源区和漏区之间的半导体层; 门区; 以及设置在所述半导体层和所述栅极区域之间的电介质区域; 其中所述半导体层包含二氧化钛膜。 晶体管可以是光感测,气体或生物感测,或者用于视觉显示器或电子电路中。 还提供了一种形成场效应晶体管的方法,包括:在栅极附近形成介电层; 形成源区和漏区; 以及在所述电介质层上形成半导体层,所述半导体层包含二氧化钛。 可以通过喷雾热解沉积二氧化钛半导体层,或者可以通过旋涂,刮涂或丝网印刷技术形成纳米晶形态的介孔TiO 2膜。