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1. 发明申请

US20070147750A1 Laser device and exposure device using the same 审中-公开
公开(公告)号：US20070147750A1
公开(公告)日：2007-06-28
申请号：US11708020
申请日：2007-02-20
申请人： Yuichi Teramura , Fusao Yamanaka , Yoji Okazaki
发明人： Yuichi Teramura , Fusao Yamanaka , Yoji Okazaki
IPC分类号： G02B6/04 , G02B6/06 , H01S3/30 , H01S3/10 , G02B6/32
CPC分类号： G03F7/70216 , G02B6/08 , G02B19/0014 , G02B19/0057 , G02B27/0994 , G03F7/70025 , H01S5/005 , H01S5/02216 , H01S5/02284 , H01S5/02292 , H01S5/4012 , H01S5/4025
摘要： In a laser module, a laser beam which is emitted from a laser element is focused by a condensing optical system and caused to enter an incidence end of an optical fiber. A laser device is provided with a plurality of these laser modules. Emission end portions of the optical fibers are bundled to form a laser emission portion. A thickness of cladding h of each optical fiber is set to a value calculated in accordance with the following equation: cladding thickness ⁢ ⁢ h ≤ ( emission ⁢ ⁢ light ⁢ ⁢ amount of ⁢ ⁢ one ⁢ ⁢ laser ⁢ ⁢ module ⁢ ⁢ W required intensity ⁢ ⁢ C × packing ratio ⁢ ⁢ P - core diameter ⁢ ⁢ t ) ÷ 2 As a result, it is possible to emit a laser-beam with a high intensity that is required for functionality as a laser light source, for the purpose of raising resolution of an exposure apparatus.

2. 发明申请

US20050164420A1 Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof 审中-公开
标题翻译：在谐振器端面附近具有电流非注入区域的半导体激光器件及其制造方法
公开(公告)号：US20050164420A1
公开(公告)日：2005-07-28
申请号：US11076918
申请日：2005-03-11
申请人： Toshiaki Kuniyasu , Fusao Yamanaka , Toshiaki Fukunaga
发明人： Toshiaki Kuniyasu , Fusao Yamanaka , Toshiaki Fukunaga
IPC分类号： H01S5/042 , H01S5/16 , H01S5/20 , H01S5/22 , H01S5/343 , H01L21/00
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/22 , H01S5/2203 , H01S5/3434
摘要： An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A SiO2 film is formed on the entire surface. After a window is formed in a portion of the SiO2 film corresponding to a ridge portion, a p-electrode is formed on a region of the SiO2 film other than the device perimeter.
摘要翻译： n-GaAs缓冲层，n-AlGaAs下包层，n或i-InGaP下光波导层，InGaAsP量子单元有源层，p或i-InGaP上光波导层，p-AlGaAs 在n-GaAs衬底上生长第一上覆层，p或i-InGaP蚀刻停止层，p-AlGaAs第二上覆层和p-GaAs接触层。在晶片上涂覆光致抗蚀剂，通过蚀刻形成两个沟槽。然后，去除设备周边上的光致抗蚀剂并选择性地蚀刻接触层。接下来，剥离光致抗蚀剂。在整个表面上形成SiO 2膜。在对应于脊部的SiO 2膜的一部分形成窗口之后，在除SiO 2膜以外的SiO 2膜的区域上形成p电极设备周长。

3. 发明授权

US06888866B2 Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof 有权
公开(公告)号：US06888866B2
公开(公告)日：2005-05-03
申请号：US09973814
申请日：2001-10-11
申请人： Toshiaki Kuniyasu , Fusao Yamanaka , Toshiaki Fukunaga
发明人： Toshiaki Kuniyasu , Fusao Yamanaka , Toshiaki Fukunaga
IPC分类号： H01S5/042 , H01S5/16 , H01S5/20 , H01S5/22 , H01S5/343 , H01S5/00
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/22 , H01S5/2203 , H01S5/3434
摘要： An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A SiO2 film is formed on the entire surface. After a window is formed in a portion of the SiO2 film corresponding to a ridge portion, a p-electrode is formed on a region of the SiO2 film other than the device perimeter.

4. 发明授权

US5049448A Magnetic recording medium containing an ester lubricant branched from the number 2 carbon position of the acid residue 失效
标题翻译：含有从酸残基的2碳位分支的酯润滑剂的磁记录介质
公开(公告)号：US5049448A
公开(公告)日：1991-09-17
申请号：US383514
申请日：1989-07-24
申请人： Takao Ohya , Yasuo Nishikawa , Jun Nakagawa , Fusao Yamanaka , Toshio Kawamata , Tsutomu Okita , Hiroshi Hashimoto , Mikihiko Kato
发明人： Takao Ohya , Yasuo Nishikawa , Jun Nakagawa , Fusao Yamanaka , Toshio Kawamata , Tsutomu Okita , Hiroshi Hashimoto , Mikihiko Kato
IPC分类号： C09D5/23 , G11B5/71 , G11B5/725
CPC分类号： G11B5/725 , G11B5/71 , Y10S428/90 , Y10T428/31 , Y10T428/31605 , Y10T428/31609
摘要： A magnetic recording medium is disclosed, comprising a nonmagnetic support having thereon a magnetic layer, wherein at least one of ester compounds represented by formula (I) is present in or on the magnetic layer, ##STR1## wherein R.sub.1 represents a straight chain, saturated alkyl group having 6 to 12 carbon atoms, R.sub.2 represents a straight chain, saturated alkyl group having 4 to 10 carbon atoms, and R represents a branched or straight chain alkyl group having 4 to 22 carbon atoms.
摘要翻译：公开了一种磁记录介质，其包括其上具有磁性层的非磁性载体，其中至少一种由式（I）表示的酯化合物存在于磁性层中或其上，其中R1表示直链具有6〜12个碳原子的链状饱和烷基，R2表示直链，碳原子数4〜10的饱和烷基，R表示碳原子数为4〜22的支链或直链烷基。

5. 发明授权

US07369586B2 Laser module 有权
标题翻译：激光模块
公开(公告)号：US07369586B2
公开(公告)日：2008-05-06
申请号：US10954245
申请日：2004-10-01
申请人： Teruhiko Kuramachi , Fusao Yamanaka , Kazuhiko Nagano
发明人： Teruhiko Kuramachi , Fusao Yamanaka , Kazuhiko Nagano
IPC分类号： H01S3/13
CPC分类号： G02B6/4206 , G02B6/4239 , H01L2224/48091 , H01L2924/12044 , H01S5/005 , H01S5/0222 , H01S5/02248 , H01S5/02284 , H01S5/4012 , H01S5/4031 , H01L2924/00014 , H01L2924/00
摘要： In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, optical components whose organic volatile gas generation measured by GC/MS is 10 μg/g or less at 150° C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 100 μg/g or less at 150° C.
摘要翻译：在包含发光波长为350〜450nm的半导体激光装置的内部的气密密封容器的激光模块中，在容器中抑制有机挥发性气体的产生，延长了模块的使用寿命。在包括发光波长为350〜450nm的半导体激光装置的内部的气密密封容器的激光模块中，通过GC / MS测定的有机挥发性气体的产生在150℃下为10mug / g以下的光学部件被定位在容器中此外，作为用于固定准直透镜等光学部件的有机粘合剂，使用通过GC / MS测定的有机挥发性气体产生在150℃下为100mug / g以下的有机粘合剂。

6. 发明申请

US20060193360A1 Semiconductor laser element having end-facet protection layer which includes unoxidized or unnitrided first sublayer formed on end facet and second sublayer produced by oxidizing or nitriding the surface of the first sublayer 审中-公开
公开(公告)号：US20060193360A1
公开(公告)日：2006-08-31
申请号：US11408932
申请日：2006-04-24
申请人： Fusao Yamanaka
发明人： Fusao Yamanaka
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , H01S5/0282 , H01S5/0283 , H01S5/22
摘要： A semiconductor laser element includes: a stack of layers having resonator facets; and at least one protection layer formed on at least one of the resonator facets. Each of the at least one protection layer includes at least first, second, and third sublayers. The first sublayer is formed nearest to the stack among the at least first, second, and third sublayers, and made of a material not containing oxygen (or nitrogen) as a constituent element. The second sublayer is made of an oxide (or nitride) produced by oxidizing (or nitriding) a portion of the first sublayer. The third sublayer is formed farthest from the stack among the at least first, second, and third sublayers, and made of an oxide (or nitride). The thickness d2 of the second sublayer and the total thickness d1 of the first and second sublayers satisfy a relationship, 0.1≦d2/d1≦0.9.

7. 发明申请

US20050074039A1 Laser module 有权
标题翻译：激光模块
公开(公告)号：US20050074039A1
公开(公告)日：2005-04-07
申请号：US10954245
申请日：2004-10-01
申请人： Teruhiko Kuramachi , Fusao Yamanaka , Kazuhiko Nagano
发明人： Teruhiko Kuramachi , Fusao Yamanaka , Kazuhiko Nagano
IPC分类号： G02B6/42 , C09J11/04 , C09J11/06 , C09J163/00 , C09J171/02 , C09J201/00 , H01S3/10 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/024 , H01S5/40
CPC分类号： G02B6/4206 , G02B6/4239 , H01L2224/48091 , H01L2924/12044 , H01S5/005 , H01S5/0222 , H01S5/02248 , H01S5/02284 , H01S5/4012 , H01S5/4031 , H01L2924/00014 , H01L2924/00
摘要： In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, optical components whose organic volatile gas generation measured by GC/MS is 10 μg/g or less at 150° C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 100 μg/g or less at 150° C.
摘要翻译：在包含发光波长为350〜450nm的半导体激光装置的内部的气密密封容器的激光模块中，在容器中抑制有机挥发性气体的产生，延长了模块的使用寿命。在包括发光波长为350〜450nm的半导体激光装置的内部的气密密封容器的激光模块中，通过GC / MS测定的有机挥发性气体的产生在150℃下为10mug / g以下的光学部件被定位在容器中此外，作为用于固定准直透镜等光学部件的有机粘合剂，使用通过GC / MS测定的有机挥发性气体产生在150℃下为100mug / g以下的有机粘合剂。

8. 发明授权

US06529537B2 Semiconductor laser device having controlled oxygen concentration at boundary between semiconductor layers and reflectance control layer formed on end facet 有权
标题翻译：具有在半导体层之间的边界处的受控氧浓度和形成在端面上的反射控制层的半导体激光器件
公开(公告)号：US06529537B2
公开(公告)日：2003-03-04
申请号：US09782057
申请日：2001-02-14
申请人： Fusao Yamanaka
发明人： Fusao Yamanaka
IPC分类号： H01S500
CPC分类号： H01S5/028 , H01S5/0281 , H01S5/0282
摘要： In a semiconductor laser device including a multilayered structure being formed of a plurality of semiconductor layers made of a plurality of group III-V compounds, and having a pair of opposite light-exit end facets; and a reflectance control layer being formed on at least one of the pair of light-exit end facets, and having at least two sublayers. In the semiconductor laser device, a region near a boundary between the multilayered structure and one of the at least two sublayers closest to the semiconductor layers of the reflectance control layer has an oxygen concentration of 15 atomic percent (atm %) or below.
摘要翻译：在包括由多个III-V族化合物制成的多个半导体层形成并具有一对相对的光出射端面的多层结构的半导体激光器件中，以及反射控制层，其形成在所述一对光出射端面中的至少一个上，并且具有至少两个子层。在半导体激光器件中，多层结构与最靠近反射控制层的半导体层的至少两个子层之一的边界附近的区域的氧浓度为15原子％（atm％）以下。

9. 发明授权

US5061562A Method for preparing a magnetic recording medium and a magnetic disk using the same 失效
标题翻译：制备磁记录介质的方法和使用其的磁盘
公开(公告)号：US5061562A
公开(公告)日：1991-10-29
申请号：US246829
申请日：1988-09-20
申请人： Fusao Yamanaka , Makoto Nagao , Yasuyuki Yamada , Kazuhiko Morita
发明人： Fusao Yamanaka , Makoto Nagao , Yasuyuki Yamada , Kazuhiko Morita
IPC分类号： G11B5/725 , G11B5/84
CPC分类号： G11B5/84 , G11B5/725 , Y10S428/90 , Y10T428/30
摘要： A method for preparing a magnetic recording medium which comprises the steps:(a) providing on a non-magnetic support, a thin magnetic metal film,(b) providing on the thin magnetic film, a protective layer comprised substantially of carbon,(c) washing the surface of the protective layer at least once, each washing performed with one substance selected from the group consisting of an alkali detergent, a neutral detergent and an organic solvent, and(d) providing on the surface of the protective layer, a lubricating layer containing at least one organic lubricating agent.Where the magnetic recording mediums produced therefrom exhibit excellent lubricating properties and running durability and causes no attachments on a magnetic head. Magnetic disks produced from the magnetic recording mediums also exhibit excellent lubricating properties and running durability and also do not cause attachments on a magnetic head.
摘要翻译：一种制备磁记录介质的方法，包括以下步骤：（a）在非磁性载体上提供薄磁性金属膜，（b）在薄磁膜上提供基本上由碳组成的保护层，（c ）至少一次洗涤保护层的表面，每次用一种选自碱洗涤剂，中性洗涤剂和有机溶剂的物质进行洗涤，和（d）在保护层的表面上提供含有至少一种有机润滑剂的润滑层。其中由其制造的磁记录介质表现出优异的润滑性能和运行耐久性，并且不会在磁头上引起附着。由磁记录介质产生的磁盘也表现出优异的润滑性能和运行耐久性，并且也不会在磁头上引起附着。

10. 发明授权

US4994321A Perpendicular magnetic recording medium and the method for preparing the same 失效
标题翻译：垂直磁记录介质及其制备方法
公开(公告)号：US4994321A
公开(公告)日：1991-02-19
申请号：US506493
申请日：1990-04-05
申请人： Makoto Nagao , Kunihiko Sano , Fusao Yamanaka , Akira Nahara
发明人： Makoto Nagao , Kunihiko Sano , Fusao Yamanaka , Akira Nahara
IPC分类号： G11B5/64 , G11B5/84
CPC分类号： G11B5/84 , G11B5/64 , G11B5/8408 , Y10S428/90 , Y10T428/265 , Y10T428/30
摘要： A perpendicular magnetic recording medium such as a floppy disk is created by providing on at least one surface of a non-magnetic support, a magnetic layer having perpendicular magnetic anisotropy and a protective layer by sputtering. First, a magnetic layer is provided, secondly, the magnetic layer is surface treated by a plasma treatment or by applying an oxide layer or a nitride layer thereon and thirdly, the protective layer is applied thereto.
摘要翻译：通过在非磁性支撑体的至少一个表面，具有垂直磁各向异性的磁性层和通过溅射提供保护层来形成诸如软盘的垂直磁记录介质。首先，提供磁性层，其次，通过等离子体处理或通过在其上施加氧化物层或氮化物层来对磁性层进行表面处理，其次，施加保护层。

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