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1. 发明授权

US08835296B2 Electronic component manufacturing method including step of embedding metal film 有权
标题翻译：电子元件制造方法，包括嵌入金属膜的步骤
公开(公告)号：US08835296B2
公开(公告)日：2014-09-16
申请号：US13163989
申请日：2011-06-20
申请人： Shunichi Wakayanagi , Takayuki Saito , Takuya Seino , Akira Matsuo , Koji Yamazaki , Eitaro Morimoto , Yohsuke Shibuya , Yu Sato , Naomu Kitano
发明人： Shunichi Wakayanagi , Takayuki Saito , Takuya Seino , Akira Matsuo , Koji Yamazaki , Eitaro Morimoto , Yohsuke Shibuya , Yu Sato , Naomu Kitano
IPC分类号： H01L29/45 , H01L21/285
CPC分类号： H01L21/76843 , C23C14/0641 , H01L21/2855 , H01L21/76877 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an electronic component manufacturing method including a step of embedding a metal film. An embodiment of the present invention includes a first step of depositing a barrier layer containing titanium nitride on an object to be processed on which a concave part is formed and a second step of filling a low-melting-point metal directly on the barrier layer under a temperature condition allowing the low-melting-point metal to flow, by a PCM sputtering method while forming a magnetic field by a magnet unit including plural magnets which are arranged at grid points of a polygonal grid so as to have different polarities between the neighboring magnets.
摘要翻译：本发明提供了一种电子部件制造方法，其包括嵌入金属膜的步骤。本发明的一个实施方案包括在其上形成有凹部的待处理物体上沉积包含氮化钛的阻挡层的第一步骤和将低熔点金属直接填充在阻挡层下面的第二步骤通过PCM溅射法，通过包括多个磁铁的磁体单元形成磁场，允许低熔点金属流动的温度条件，该多个磁体布置在多边形网格的网格点处，以便在相邻的磁铁。

2. 发明申请

US20120161322A1 ELECTRONIC COMPONENT MANUFACTURING METHOD INCLUDING STEP OF EMBEDDING METAL FILM 有权
标题翻译：电子元件制造方法，包括嵌入金属膜的步骤
公开(公告)号：US20120161322A1
公开(公告)日：2012-06-28
申请号：US13163989
申请日：2011-06-20
申请人： Shunichi Wakayanagi , Takayuki Saito , Takuya Seino , Akira Matsuo , Koji Yamazaki , Eitaro Morimoto , Yohsuke Shibuya , Yu Sato , Naomu Kitano
发明人： Shunichi Wakayanagi , Takayuki Saito , Takuya Seino , Akira Matsuo , Koji Yamazaki , Eitaro Morimoto , Yohsuke Shibuya , Yu Sato , Naomu Kitano
IPC分类号： H01L29/45 , H01L21/285 , C23C16/50
CPC分类号： H01L21/76843 , C23C14/0641 , H01L21/2855 , H01L21/76877 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an electronic component manufacturing method including a step of embedding a metal film. An embodiment of the present invention includes a first step of depositing a barrier layer containing titanium nitride on an object to be processed on which a concave part is formed and a second step of filling a low-melting-point metal directly on the barrier layer under a temperature condition allowing the low-melting-point metal to flow, by a PCM sputtering method while forming a magnetic field by a magnet unit including plural magnets which are arranged at grid points of a polygonal grid so as to have different polarities between the neighboring magnets.
摘要翻译：本发明提供了一种电子部件制造方法，其包括嵌入金属膜的步骤。本发明的一个实施方案包括在其上形成有凹部的待处理物体上沉积包含氮化钛的阻挡层的第一步骤和将低熔点金属直接填充在阻挡层下面的第二步骤通过PCM溅射法，通过包括多个磁铁的磁体单元形成磁场，允许低熔点金属流动的温度条件，该多个磁体布置在多边形网格的网格点处，以便在相邻的磁铁。

3. 发明申请

US20110089023A1 PLASMA PROCESSING APPARATUS AND ELECTRONIC DEVICE MANUFACTURING METHOD 有权
标题翻译：等离子体加工设备和电子设备制造方法
公开(公告)号：US20110089023A1
公开(公告)日：2011-04-21
申请号：US12979968
申请日：2010-12-28
申请人： YOH TANAKA , KAZUYA KONAGA , EISAKU WATANABE , EITARO MORIMOTO
发明人： YOH TANAKA , KAZUYA KONAGA , EISAKU WATANABE , EITARO MORIMOTO
IPC分类号： C23C14/34
CPC分类号： C23C14/34 , C23C14/564 , H01J37/34 , H01J37/3441
摘要： A plasma processing apparatus includes a chamber, substrate stage, electrode, conductive members, and deposition shield. The chamber is maintained at a predetermined potential. The substrate stage serves to hold a substrate within the chamber. The electrode serves to generate a plasma inside the chamber by applying AC power to the chamber. The conductive members connect the substrate stage and the side wall of the chamber by surrounding the plasma space between the substrate stage and the electrode in plasma formation, and at least some of them are separated by being moved by a driving mechanism so as to form an opening for loading a substrate onto the substrate stage while no plasma is being formed. The deposition shield covers the surfaces of the conductive members on the side of the plasma space.
摘要翻译：等离子体处理装置包括室，衬底台，电极，导电构件和沉积屏蔽。室保持在预定的电位。衬底台用于将衬底保持在腔室内。电极用于通过向腔室施加AC电力来在室内产生等离子体。导电构件通过在等离子体形成中围绕衬底台和电极之间的等离子体空间来连接衬底台和腔室的侧壁，并且其中的至少一些通过由驱动机构移动而分离，以形成用于将衬底加载到衬底台上而不形成等离子体的开口。沉积屏蔽覆盖等离子体空间一侧的导电构件的表面。

4. 发明授权

US08303785B2 Plasma processing apparatus and electronic device manufacturing method 有权
标题翻译：等离子体处理装置和电子装置的制造方法
公开(公告)号：US08303785B2
公开(公告)日：2012-11-06
申请号：US12979968
申请日：2010-12-28
申请人： Yoh Tanaka , Kazuya Konaga , Eisaku Watanabe , Eitaro Morimoto
发明人： Yoh Tanaka , Kazuya Konaga , Eisaku Watanabe , Eitaro Morimoto
IPC分类号： C23C14/34
CPC分类号： C23C14/34 , C23C14/564 , H01J37/34 , H01J37/3441
摘要： A plasma processing apparatus includes a chamber, substrate stage, electrode, conductive members, and deposition shield. The chamber is maintained at a predetermined potential. The substrate stage serves to hold a substrate within the chamber. The electrode serves to generate a plasma inside the chamber by applying AC power to the chamber. The conductive members connect the substrate stage and the side wall of the chamber by surrounding the plasma space between the substrate stage and the electrode in plasma formation, and at least some of them are separated by being moved by a driving mechanism so as to form an opening for loading a substrate onto the substrate stage while no plasma is being formed. The deposition shield covers the surfaces of the conductive members on the side of the plasma space.
摘要翻译：等离子体处理装置包括室，衬底台，电极，导电构件和沉积屏蔽。室保持在预定的电位。衬底台用于将衬底保持在腔室内。电极用于通过向腔室施加AC电力来在室内产生等离子体。导电构件通过在等离子体形成中围绕衬底台和电极之间的等离子体空间来连接衬底台和腔室的侧壁，并且其中的至少一些通过由驱动机构移动而分离，以形成用于将衬底加载到衬底台上而不形成等离子体的开口。沉积屏蔽覆盖等离子体空间一侧的导电构件的表面。

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