基本信息:
- 专利标题： SEMICONDUCTOR DEVICE PERFORMING REFRESH OPERATION
- 申请号：PCT/US2022/049982 申请日：2022-11-15
- 公开(公告)号：WO2023086677A1 公开(公告)日：2023-05-19
- 发明人： HATAKEYAMA, Atsushi , LEE, Hyun Yoo , KIM, Kang-Yong , YAMAMOTO, Akiyoshi
- 申请人： MICRON TECHNOLOGY, INC.
- 申请人地址： 8000 South Federal Way
- 专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人地址： 8000 South Federal Way
- 代理机构： ENG, Kimton et al.
- 优先权： US17/454,963 2021-11-15
- 主分类号： G11C11/406
- IPC分类号： G11C11/406 ; G11C11/408 ; G06F3/06
摘要：
Disclosed herein is an apparatus that includes a plurality of memory banks and a refresh controller configured to perform a refresh operation on one or more of the plurality of memory banks having a first state without performing the refresh operation on one or more of the plurality of memory banks having a second state responsive to a first refresh command, and perform the refresh operation on a selected one of the plurality of memory banks responsive to a second refresh command. The refresh controller is configured to bring the selected one of the plurality of memory banks into the second state when the refresh operation is performed responsive to the second refresh command.
IPC结构图谱:
| G11C11/56 | 组优先于G11C11/02至G11C11/54中各组。 |
| --G11C11/19 | .在谐振电路中应用非线性电抗器件的 |
| ----G11C11/26 | ..应用放电管的 |
| ------G11C11/40 | ...应用晶体管的 |
| --------G11C11/401 | ....形成需要刷新或电荷再生的单元的，即，动态单元的 |
| ----------G11C11/406 | .....刷新或电荷再生周期的管理或控制 |