A semiconductor device assembly includes a first semiconductor device including a plurality of electrical contacts on an upper surface thereof, a monolithic silicon structure having a lower surface in contact with the upper surface and a cavity extending from the lower surface into a body of the monolithic silicon structure; a second semiconductor device disposed in the cavity, the second semiconductor device including a first plurality of interconnects, each operatively coupled to a corresponding one of the plurality of electrical contacts, and a second plurality of interconnects on an upper surface of the second semiconductor device, each coupled to a corresponding TSV of a plurality of TSVs extending from the cavity to a top surface of the monolithic silicon structure; and a third semiconductor device disposed over the monolithic silicon structure and including a third plurality of interconnects, each operatively coupled to a corresponding one of the plurality of TSVs.