发明申请
WO2023064681A1 MODELING THERMAL DONOR FORMATION AND TARGET RESISTIVITY FOR SINGLE CRYSTAL SILICON INGOT PRODUCTION
审中-公开
基本信息:
- 专利标题： MODELING THERMAL DONOR FORMATION AND TARGET RESISTIVITY FOR SINGLE CRYSTAL SILICON INGOT PRODUCTION
- 申请号：PCT/US2022/077268 申请日：2022-09-29
- 公开(公告)号：WO2023064681A1 公开(公告)日：2023-04-20
- 发明人： HUDSON, Carissima Marie , RYU, JaeWoo , SEACRIST, Michael Robbin
- 申请人： GLOBALWAFERS CO., LTD.
- 申请人地址： No. 8, Gongye E. 2nd Rd., East District
- 专利权人： GLOBALWAFERS CO., LTD.
- 当前专利权人： GLOBALWAFERS CO., LTD.
- 当前专利权人地址： No. 8, Gongye E. 2nd Rd., East District
- 代理机构： SCHUTH, Richard A. et al.
- 优先权： US63/254,337 2021-10-11
- 主分类号： C30B15/04
- IPC分类号： C30B15/04 ; C30B15/20 ; C30B29/06 ; C30B33/02
摘要：
Methods for producing single crystal silicon ingots are disclosed. The methods may involve modeling formation of thermal donors and target resistivity during downstream annealing processes such as during subsequent device manufacturing such as manufacturing of interposer devices. The model may output a pre-anneal wafer resistivity target range. The single crystal silicon ingot production process may be modeled to determine a counter-doping schedule to achieve the pre-anneal wafer resistivity target range across a longer length of the main body of the ingot.