基本信息:
- 专利标题: IMPROVED HANDLING FOR HIGH RESISTIVITY SUBSTRATES
- 申请号:PCT/US2022/020337 申请日:2022-03-15
- 公开(公告)号:WO2022216416A1 公开(公告)日:2022-10-13
- 发明人: GU, Sipeng , SHIM, Kyu-Ha
- 申请人: APPLIED MATERIALS, INC.
- 申请人地址: 3050 Bowers Avenue
- 专利权人: APPLIED MATERIALS, INC.
- 当前专利权人: APPLIED MATERIALS, INC.
- 当前专利权人地址: 3050 Bowers Avenue
- 代理机构: FRAME, Robert C et al.
- 优先权: US17/226,277 2021-04-09
- 主分类号: H01L21/265
- IPC分类号: H01L21/265 ; H01L21/02 ; H01L21/683
摘要:
A method of modifying a high-resistivity substrate so that the substrate may be electrostatically clamped to a chuck is disclosed. The bottom surface is implanted with a resistivity-reducing species. In this way, resistivity of the bottom surface of the substrate may be greatly reduced. In some embodiments, to implant the bottom surface, a coating is applied to the top surface. After application of the coating, the substrate is flipped so that the front surface contacts the top surface of the chuck. The ions are then implanted into the exposed bottom surface to create the low resistivity layer. The resistivity of the low resistivity layer proximate the bottom surface after implant may be less than 1000 ohm-cm. Once the bottom surface has been implanted, the substrate may be processed conventionally. The low resistivity layer may later be removed by wafer backside thinning processes.
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/263 | .....带有高能辐射的 |
------------------H01L21/265 | ......产生离子注入的 |