基本信息:
- 专利标题： 半導体装置
- 专利标题（英）：SEMICONDUCTOR DEVICE
- 申请号：PCT/JP2022/012322 申请日：2022-03-17
- 公开(公告)号：WO2022196768A1 公开(公告)日：2022-09-22
- 发明人： 窪内 源宜
- 申请人： 富士電機株式会社
- 申请人地址： 〒2109530 神奈川県川崎市川崎区田辺新田１番１号 Kanagawa
- 专利权人： 富士電機株式会社
- 当前专利权人： 富士電機株式会社
- 当前专利权人地址： 〒2109530 神奈川県川崎市川崎区田辺新田１番１号 Kanagawa
- 代理机构： 龍華国際特許業務法人
- 优先权： JP2021-044157 2021-03-17
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/322 ; H01L29/06 ; H01L29/78 ; H01L29/739 ; H01L21/336 ; H01L29/861 ; H01L29/868
Provided is a semiconductor device comprising: a semiconductor substrate having bulk donors distributed throughout the entirety thereof; a high-concentration region that is provided to the semiconductor substrate and that includes a high-concentration hydrogen peak having a hydrogen dosage of 3×1015/cm2 and a position overlapping the high-concentration hydrogen peak in the depth direction of the semiconductor substrate, the high-concentration region being such that the donor concentration thereof is higher than the bulk donor concentration thereof; and a lifetime adjustment part that is provided at a position overlapping the high-concentration hydrogen peak in the depth direction and that is such that a carrier lifetime exhibits a local minimum value.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/263 | .....带有高能辐射的 |
| ------------------H01L21/265 | ......产生离子注入的 |