基本信息:
- 专利标题： PIXEL CIRCUIT AND SOLID-STATE IMAGING DEVICE
- 申请号：PCT/EP2022/053943 申请日：2022-02-17
- 公开(公告)号：WO2022179930A1 公开(公告)日：2022-09-01
- 发明人： ZEITUNI, Golan , ESHEL, Noam Zeev
- 申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION , SONY EUROPE B. V.
- 申请人地址： 4-14-1 Asahi-cho; The Heights, Brooklands
- 专利权人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION,SONY EUROPE B. V.
- 当前专利权人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION,SONY EUROPE B. V.
- 当前专利权人地址： 4-14-1 Asahi-cho; The Heights, Brooklands
- 代理机构： MÜLLER HOFFMANN & PARTNER PATENTANWÄLTE MBB
- 优先权： EP21158782.9 2021-02-23
- 主分类号： H04N5/355
- IPC分类号： H04N5/355 ; H04N5/3745
摘要：
A pixel circuit (100) includes a photoelectric conversion circuit (110), an integration capacitor (Cint) and a supplementary circuit (120). The photoelectric conversion circuit (110) generates and outputs a photocurrent (Iphoto). The integration capacitor (Cint) includes a storage electrode (CintS) and a reference electrode (CintR), wherein the reference electrode (CintR) is connected to a first supply potential (VSUP1), and wherein the integration capacitor (Cint) is configured to integrate the photocurrent on the storage electrode (CintS) in an integration period (Tint). The supplementary circuit (120) pre-charges a working node (WN) between the photoelectric conversion circuit (110) and the storage electrode (CintS) to a pre-charge potential (Vpre) that differs from the first supply potential (VSUP1).