发明申请
WO2022129049A1 TWO-DIMENSIONAL MATERIAL AND HETEROSTRUCTURES ON AN INTERMEDIATE POLYMER TRANSFER LAYER AND THEIR FABRICATION
审中-公开
基本信息:
- 专利标题： TWO-DIMENSIONAL MATERIAL AND HETEROSTRUCTURES ON AN INTERMEDIATE POLYMER TRANSFER LAYER AND THEIR FABRICATION
- 申请号：PCT/EP2021/085690 申请日：2021-12-14
- 公开(公告)号：WO2022129049A1 公开(公告)日：2022-06-23
- 发明人： SHIVAYOGIMATH, Abhay , BØGGILD, Peter , BOOTH, Timothy John
- 申请人： DANMARKS TEKNISKE UNIVERSITET
- 申请人地址： Anker Engelunds Vej 101
- 专利权人： DANMARKS TEKNISKE UNIVERSITET
- 当前专利权人： DANMARKS TEKNISKE UNIVERSITET
- 当前专利权人地址： Anker Engelunds Vej 101
- 代理机构： HØIBERG P/S
- 优先权： EP20213739.4 2020-12-14
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/18 ; H01L21/683 ; C01B32/19
摘要：
The present disclosure relates to a method of manufacturing a water-soluble transfer stack comprising multilayer two-dimensional material, the method comprising: i. Providing a growth stack comprising a growth substrate and a two-dimensional material layer; ii. Applying an intercalating solution, to the growth stack; iii. Applying a transfer layer comprising a water-soluble polymer film, to the growth stack; iv. Delaminating the water-soluble polymer film together with the two-dimensional material layer, thereby obtaining a delaminated film, from the growth substrate; and v. Repeating steps i.-iv. a number of times, wherein the delaminated film is used as the transfer layer; thereby manufacturing a water-soluble transfer stack comprising multilayer two-dimensional material.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |