基本信息:
- 专利标题： AREA-SELECTIVE ATOMIC LAYER DEPOSITION OF PASSIVATION LAYERS
- 申请号：PCT/US2021/056626 申请日：2021-12-15
- 公开(公告)号：WO2022108710A1 公开(公告)日：2022-05-27
- 发明人： WANG, Yong , LEONCINI, Andrea , YONG, Doreen Wei Ying , SUDIJONO, John
- 申请人： APPLIED MATERIALS, INC. , NATIONAL UNIVERSITY OF SINGAPORE
- 申请人地址： 3050 Bowers Avenue; 21 Lower Kent Ridge Road
- 专利权人： APPLIED MATERIALS, INC.,NATIONAL UNIVERSITY OF SINGAPORE
- 当前专利权人： APPLIED MATERIALS, INC.,NATIONAL UNIVERSITY OF SINGAPORE
- 当前专利权人地址： 3050 Bowers Avenue; 21 Lower Kent Ridge Road
- 代理机构： SERVILLA, Scott S.
- 优先权： US17/081,498 2020-10-27
- 主分类号： C23C16/04
- IPC分类号： C23C16/04 ; C23C16/455 ; H01L21/02 ; B05D1/00
摘要：
Methods of enhancing selective deposition are described. In some embodiments, a passivation layer is deposited on a metal surface before deposition of a dielectric material. A block I molecule is deposited on a metal surface, and a block II molecule is reacted with the block I molecule to form a passivation layer.