基本信息:
- 专利标题： SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THEREOF
- 申请号：PCT/CN2020/114197 申请日：2020-09-09
- 公开(公告)号：WO2022051933A1 公开(公告)日：2022-03-17
- 发明人： YANG, Chao , ZHOU, Chunhua , ZHAO, Qiyue
- 申请人： INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- 申请人地址： 8F, 1066 Lu Shen Ave, Foho High-Tech Zone, Lili Town, Wujiang District
- 专利权人： INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- 当前专利权人： INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- 当前专利权人地址： 8F, 1066 Lu Shen Ave, Foho High-Tech Zone, Lili Town, Wujiang District
- 代理机构： IDEA INTELLECTUAL (SHENZHEN) IP AGENCY
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/78 ; H01L21/336 ; H01L29/423
摘要：
Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a barrier layer, a third nitride semiconductor layer and a gate structure. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The barrier layer is disposed on the second nitride semiconductor layer and has a bandgap greater than that of the second nitride semiconductor layer. The third nitride semiconductor layer is doped with impurity and disposed on the barrier layer. The gate structure is disposed on the third nitride semiconductor layer.