基本信息:
- 专利标题： RF AMPLIFIER DEVICES AND METHODS OF MANUFACTURING
- 申请号：PCT/US2021/025102 申请日：2021-03-31
- 公开(公告)号：WO2021202674A2 公开(公告)日：2021-10-07
- 发明人： NOORI, Basim , MARBELL, Marvin , SHEPPARD, Scott , LIM, Kwangmo Chris , KOMPOSCH, Alexander , MU, Qianli
- 申请人： CREE, INC.
- 申请人地址： 4600 Silicon Drive
- 专利权人： CREE, INC.
- 当前专利权人： CREE, INC.
- 当前专利权人地址： 4600 Silicon Drive
- 代理机构： WHETZEL, John, K.
- 优先权： US16/906,610 2020-06-19
- 主分类号： H01L23/66
- IPC分类号： H01L23/66 ; H01L23/36 ; H01L23/498 ; H01L23/522 ; H01L23/482 ; H01L23/057 ; H01L23/495 ; H01L2223/6616 ; H01L2223/6644 ; H01L2223/6655 ; H01L2224/16227 ; H01L2224/214 ; H01L23/047 ; H01L23/13 ; H01L23/142 ; H01L23/3121 ; H01L23/4334 ; H01L23/4824 ; H01L23/49531 ; H01L24/19 ; H01L24/20 ; H01L29/2003 ; H01L29/4175 ; H01L29/41758 ; H01L29/7786 ; H01L2924/1033 ; H01L2924/13064 ; H01L2924/1421 ; H03F1/0288 ; H03F2200/451 ; H03F3/195
摘要：
A transistor amplifier includes a semiconductor layer structure comprising first and second major surfaces and a plurality of unit cell transistors on the first major surface that are electrically connected in parallel, each unit cell transistor comprising a gate finger coupled to a gate manifold, a drain finger coupled to a drain manifold, and a source finger. The semiconductor layer structure is free of a via to the source fingers on the second major surface.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/552 | .防辐射保护装置，例如光 |
| ----------H01L23/64 | ..阻抗装置 |
| ------------H01L23/66 | ...高频匹配器 |