基本信息:
- 专利标题： ETCH-LESS ALGAN GAN TRIGATE TRANSISTOR
- 申请号：PCT/JP2021/005580 申请日：2021-02-09
- 公开(公告)号：WO2021192727A1 公开(公告)日：2021-09-30
- 发明人： TEO, Koon Hoo , CHOWDHURY, Nadim
- 申请人： MITSUBISHI ELECTRIC CORPORATION
- 申请人地址： 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo
- 专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址： 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo
- 代理机构： FUKAMI PATENT OFFICE, P.C.
- 优先权： US16/830,317 2020-03-26
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/337 ; H01L29/10 ; H01L21/265 ; H01L29/20 ; H01L21/02304 ; H01L21/0415 ; H01L21/26586 ; H01L29/0615 ; H01L29/1066 ; H01L29/2003 ; H01L29/66462 ; H01L29/7783 ; H01L29/7786 ; H01L29/7787 ; H01L29/7788
摘要：
Devices and methods of a field effect transistor device that include a source, a gate and a drain. The transistor includes a semiconductor region position is under the source, the gate and the drain. Such that the semiconductor region can include a gallium nitride (GaN) layer and an III Nitride (III-N) layer. Wherein the GaN layer includes a band gap, and the III-N layer includes a band gap. Such that the III-N layer band gap is higher than the GaN layer band gap. A sub-region of the semiconductor region is located underneath the gate and is doped with Mg ions at selective locations in the sub-region.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/778 | .....带有二维载流子气沟道的，如HEMT |