基本信息:
- 专利标题： GATE ALL AROUND TRANSISTORS WITH HIGH CHARGE MOBILITY CHANNEL MATERIALS
- 申请号：PCT/US2021/013004 申请日：2021-01-11
- 公开(公告)号：WO2021150392A1 公开(公告)日：2021-07-29
- 发明人： YANG, Bin , YANG, Haining , LI, Xia
- 申请人： QUALCOMM INCORPORATED
- 申请人地址： Attn: International IP Administration
- 专利权人： QUALCOMM INCORPORATED
- 当前专利权人： QUALCOMM INCORPORATED
- 当前专利权人地址： Attn: International IP Administration
- 代理机构： QIU, Xiaotun
- 优先权： US16/749,897 2020-01-22
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L27/06 ; H01L27/092 ; H01L29/06 ; H01L29/423 ; H01L29/775 ; H01L21/8252 ; H01L21/823807 ; H01L21/823878 ; H01L27/0605 ; H01L29/0673 ; H01L29/1033 ; H01L29/16 ; H01L29/201 ; H01L29/42392 ; H01L29/432 ; H01L29/66484 ; H01L29/66522 ; H01L29/7831 ; H01L29/78696
摘要：
A semiconductor device (200) comprising an N-type metal oxide semiconductor (NMOS) gate-all-around (GAA) transistor (206) and a P-type metal oxide semiconductor (PMOS) GAA transistor (222) with high charge mobility channel materials is disclosed. The semiconductor device may include a substrate (202). The semiconductor device may also include an NMOS GAA transistor on the substrate, wherein the NMOS GAA transistor comprises a first channel material (210, 214). The semiconductor device may further include a PMOS GAA transistor on the substrate, wherein the PMOS GAA transistor comprises a second channel material (230, 234). The first channel material may have an electron mobility greater than an electron mobility of Silicon (Si) and the second channel material may have a hole mobility greater than a hole mobility of Si.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置；专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |
| ----------H01L21/71 | ..限定在组H01L21/70中的器件的特殊部件的制造 |
| ------------H01L21/78 | ...把衬底连续地分成多个独立的器件 |
| --------------H01L21/782 | ....制造多个器件，每一个由单个电路元件组成 |
| ----------------H01L21/822 | .....衬底是采用硅工艺的半导体的 |
| ------------------H01L21/8222 | ......双极工艺 |
| --------------------H01L21/8234 | .......MIS工艺 |
| ----------------------H01L21/8238 | ........互补场效应晶体管，例如CMOS |