基本信息:
- 专利标题： CVD-REAKTOR MIT DOPPELTER VORLAUFZONENPLATTE
- 专利标题（英）：CVD REACTOR HAVING DOUBLED FLOW ZONE PLATE
- 申请号：PCT/EP2021/050038 申请日：2021-01-05
- 公开(公告)号：WO2021144161A1 公开(公告)日：2021-07-22
- 发明人： BUTTITTA, Francesco , MICCOLI, Ilio , KRÜCKEN, Wilhelm Josef Thomas
- 申请人： AIXTRON SE
- 申请人地址： Dornkaulstr. 2
- 专利权人： AIXTRON SE
- 当前专利权人： AIXTRON SE
- 当前专利权人地址： Dornkaulstr. 2
- 代理机构： GRUNDMANN, Dirk et al.
- 优先权： DE10 2020 101 066.4 2020-01-17
- 主分类号： C23C16/44
- IPC分类号： C23C16/44 ; C23C16/455 ; C23C16/458 ; C23C16/46 ; H01L21/67 ; H01L21/687 ; C23C16/4411 ; C23C16/45508 ; C23C16/45572 ; C23C16/4558 ; C23C16/4581 ; C23C16/4584 ; C23C16/4586 ; H01L21/67103 ; H01L21/68764 ; H01L21/68771
The invention relates to an apparatus wherein a gas inlet element (5), a susceptor delimiting a process chamber (8) at the bottom, a heating device (6) heating the susceptor (2), and a process chamber ceiling (7) delimiting the process chamber (8) at the top are arranged in a reactor housing (1), wherein the susceptor (2) forms a substrate bearing zone (S) for receiving a substrate (4) to be coated and a flow zone plate (10) lies on a region of the susceptor (2) arranged between the gas inlet element (5) and the substrate bearing zone (S) such that a free space (12, 13) remains between the top side (2') of the susceptor (2) and the bottom side (10') of the flow zone plate (10), in which free space an additional plate (11) is located. The invention further relates to a method for depositing III-V semiconductor layers. In order to maintain the parameters that influence the wavelengths of optoelectronic components in a tight tolerance range, the invention proposes a doubled flow zone plate (10, 11), such that the temperature of the flow zone is 10 to 40°C lower than the substrate temperature.