基本信息:
- 专利标题: ゲート駆動回路
- 专利标题(英):GATE DRIVE CIRCUIT
- 申请号:PCT/JP2020/037382 申请日:2020-09-30
- 公开(公告)号:WO2021085027A1 公开(公告)日:2021-05-06
- 发明人: 小川 紘生
- 申请人: 株式会社タムラ製作所
- 申请人地址: 〒1788511 東京都練馬区東大泉一丁目19番43号 Tokyo
- 专利权人: 株式会社タムラ製作所
- 当前专利权人: 株式会社タムラ製作所
- 当前专利权人地址: 〒1788511 東京都練馬区東大泉一丁目19番43号 Tokyo
- 优先权: JP2019-199392 2019-10-31
- 主分类号: H03K17/04
- IPC分类号: H03K17/04 ; H03K17/567 ; H03K17/687
The purpose of the present invention is to provide a gate drive circuit using a simpler circuit and equipped with a faster switch circuit, while suppressing cost increases. The gate drive circuit drives a semiconductor switch on the basis of a control signal. The gate drive circuit is provided with: an input terminal; a high-side switch connected to a positive-side power supply; a low-side switch connected to a negative-side power supply; a first differentiating circuit which is connected to the positive-side power supply and which differentiates and supplies the control signal to the high-side switch; a second differentiating circuit which is connected to the negative-side power supply and which differentiates and supply the control signal to the low-side switch; an output terminal for outputting a driving signal; a first impedance circuit connected between the high-side switch and the output terminal; and a second impedance circuit connected between the high-side switch and the output terminal.
IPC结构图谱:
H | 电学 |
--H03 | 基本电子电路 |
----H03K | 脉冲技术 |
------H03K17/00 | 电子开关或选通,即不通过通断接触的 |
--------H03K17/04 | .提高开关速度的改进 |