基本信息:
- 专利标题： IMAGE SENSOR STRUCTURE
- 申请号：PCT/US2018/058890 申请日：2018-11-02
- 公开(公告)号：WO2019133105A1 公开(公告)日：2019-07-04
- 发明人： CAI, Xiuyu , AGAH, Ali , FUNG, Tracy H. , DEHLINGER, Dietrich
- 申请人： ILLUMINA, INC.
- 申请人地址： 5200 Illumina Way San Diego, California 92122 US
- 专利权人： ILLUMINA, INC.
- 当前专利权人： ILLUMINA, INC.
- 当前专利权人地址： 5200 Illumina Way San Diego, California 92122 US
- 代理机构： SCUDERI, Stephen P.
- 优先权： US62/610,354 20171226; NL2020615 20180319
- 主分类号： H01L27/146
- IPC分类号： H01L27/146
摘要：
An example image sensor structure includes an image layer. The image layer includes an array of light detectors disposed therein. A device stack is disposed over the image layer. An array of light guides is disposed in the device stack. Each light guide is associated with at least one light detector of the array of light detectors. A passivation stack is disposed over the device stack. The passivation stack includes a bottom surface in direct contact with a top surface of the light guides. An array of nanowells is disposed in a top layer of the passivation stack. Each nanowell is associated with a light guide of the array of light guides. A crosstalk blocking metal structure is disposed in the passivation stack. The crosstalk blocking metal structure reduces crosstalk within the passivation stack.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
| --------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
| ----------H01L27/144 | ..由辐射控制的器件 |
| ------------H01L27/146 | ...图像结构 |