基本信息:
- 专利标题： THROUGH-SILICON VIA INTEGRATION FOR QUANTUM CIRCUITS
- 申请号：PCT/US2017/066891 申请日：2017-12-17
- 公开(公告)号：WO2019117975A1 公开(公告)日：2019-06-20
- 发明人： LAMPERT, Lester , ROBERTS, Jeanette M. , CAUDILLO, Roman , YOSCOVITS, Zachary R. , MICHALAK, David J. , CLARKE, James S. , GEORGE, Hubert C. , PILLARISETTY, Ravi , THOMAS, Nicole K. , SINGH, Kanwaljit
- 申请人： INTEL CORPORATION
- 申请人地址： 2200 Mission College Boulevard Santa Clara, California 95054-1549 US
- 专利权人： INTEL CORPORATION
- 当前专利权人： INTEL CORPORATION
- 当前专利权人地址： 2200 Mission College Boulevard Santa Clara, California 95054-1549 US
- 代理机构： HARTMANN, Natalya
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L29/66 ; H01L29/80 ; H01L25/065
摘要：
Embodiments of the present disclosure propose an approach to integrating TSVs into substrates on which quantum circuits are built. The approach is based on providing an etch-stop layer over the qubit side of a substrate, in order to protect the qubit side, and performing the necessary processing to form the TSVs from the backside of the substrate. Namely, an etch is performed on the backside of the substrate to form via openings extending through the substrate and stopping at the etch-stop layer, and, following the etch, a superconductive material is conformally deposited into the openings, thus lining the sidewalls of the openings and supported at the bottom of the openings by the etch-stop layer. The remaining volume of the openings may then be filled with a fill material. After that, the etch-stop layer may be removed and qubits devices may be provided on the qubit side of the substrate.