发明申请
WO2019066875A1 FIELD EFFECT TRANSISTORS HAVING FERROELECTRIC OR ANTIFERROELECTRIC GATE DIELECTRIC STRUCTURE
审中-公开
基本信息:
- 专利标题： FIELD EFFECT TRANSISTORS HAVING FERROELECTRIC OR ANTIFERROELECTRIC GATE DIELECTRIC STRUCTURE
- 申请号：PCT/US2017/054164 申请日：2017-09-28
- 公开(公告)号：WO2019066875A1 公开(公告)日：2019-04-04
- 发明人： KIM, Seiyon , AVCI, Uygar E. , HOWARD, Joshua M. , YOUNG, Ian A. , MORRIS, Daniel H.
- 申请人： INTEL CORPORATION , KIM, Seiyon , AVCI, Uygar E. , HOWARD, Joshua M. , YOUNG, Ian A. , MORRIS, Daniel H.
- 申请人地址： 2200 Mission College Boulevard Santa Clara, California 95054 US
- 专利权人： INTEL CORPORATION,KIM, Seiyon,AVCI, Uygar E.,HOWARD, Joshua M.,YOUNG, Ian A.,MORRIS, Daniel H.
- 当前专利权人： INTEL CORPORATION,KIM, Seiyon,AVCI, Uygar E.,HOWARD, Joshua M.,YOUNG, Ian A.,MORRIS, Daniel H.
- 当前专利权人地址： 2200 Mission College Boulevard Santa Clara, California 95054 US
- 代理机构： BRASK, Justin K. et al.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L29/51
摘要：
Field effect transistors having a ferroelectric or antiferroelectric gate dielectric structure are described. In an example, an integrated circuit structure includes a semiconductor channel structure includes a monocrystalline material. A gate dielectric is over the semiconductor channel structure. The gate dielectric includes a ferroelectric or antiferroelectric polycrystalline material layer. A gate electrode has a conductive layer on the ferroelectric or antiferroelectric polycrystalline material layer, the conductive layer including a metal. A first source or drain structure is at a first side of the gate electrode. A second source or drain structure is at a second side of the gate electrode opposite the first side.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/78 | .....由绝缘栅产生场效应的 |