基本信息:
- 专利标题: 半導体装置、および半導体装置の作製方法
- 专利标题(英):SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
- 申请号:PCT/IB2018/056862 申请日:2018-09-10
- 公开(公告)号:WO2019053573A1 公开(公告)日:2019-03-21
- 发明人: 方堂涼太 , 松林大介 , 倉田求 , 本田龍之介
- 申请人: 株式会社半導体エネルギー研究所
- 申请人地址: 〒2430036 神奈川県厚木市長谷398 Kanagawa JP
- 专利权人: 株式会社半導体エネルギー研究所
- 当前专利权人: 株式会社半導体エネルギー研究所
- 当前专利权人地址: 〒2430036 神奈川県厚木市長谷398 Kanagawa JP
- 优先权: JP2017-177432 20170915
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L21/336 ; H01L21/8234 ; H01L21/8242 ; H01L27/06 ; H01L27/088 ; H01L27/108 ; H01L27/1156 ; H01L29/788 ; H01L29/792
Provided is a semiconductor device having excellent electrical properties. Specifically provided is a semiconductor device having an oxide in a channel-forming region, wherein: the semiconductor device is provided with an oxide upon a substrate, a first insulator upon the oxide, a second insulator upon the first insulator, a third insulator, and a conductor upon the third insulator; a region is provided in which the oxide and the first insulator are in contact; an opening for exposing the oxide is provided in the first insulator and the second insulator; the third insulator is disposed in a manner covering the inner walls and the bottom surface of the opening; the conductor is disposed in a manner embedded in the opening; the conductor has a region that overlaps with the oxide, with the third insulator therebetween; and the first insulator includes an element other than the main constituent of the oxide.
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L29/00 | 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件 |
--------H01L29/02 | .按其半导体本体的特征区分的 |
----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
------------H01L29/70 | ...双极器件 |
--------------H01L29/762 | ....电荷转移器件 |
----------------H01L29/78 | .....由绝缘栅产生场效应的 |
------------------H01L29/786 | ......薄膜晶体管 |