基本信息:
- 专利标题： THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- 申请号：PCT/CN2018/077939 申请日：2018-03-02
- 公开(公告)号：WO2019052127A1 公开(公告)日：2019-03-21
- 发明人： ZHU, Jifeng , LU, Zhenyu , CHEN, Jun , HU, Yushi , TAO, Qian , YANG, Simon Shi-Ning , YANG, Steve Weiyi
- 申请人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 申请人地址： Room 7018, No.18, Huaguang Road, Guandong Science and Technology Industrial Park, East Lake High-Tech Development Zone Wuhan, Hubei 430074 CN
- 专利权人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 当前专利权人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 当前专利权人地址： Room 7018, No.18, Huaguang Road, Guandong Science and Technology Industrial Park, East Lake High-Tech Development Zone Wuhan, Hubei 430074 CN
- 代理机构： NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD.
- 优先权： CN201710831396.8 20170915
- 主分类号： H01L27/11578
- IPC分类号： H01L27/11578 ; H01L27/1157 ; H01L27/11551
摘要：
Three-dimensional (3D) memory devices (200) and methods for forming the 3D memory devices (200) are disclosed. A NAND memory device (200) includes a substrate (202), a plurality of NAND strings (230) on the substrate (202), one or more peripheral devices above the NAND strings (230), a single crystalline silicon layer above the peripheral devices, and one or more interconnect layers between the peripheral devices and the NAND strings (230). The NAND memory device (200) includes a bonding interface (219) at which an array interconnect layer contacts a peripheral interconnect layer (222).
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
| --------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
| ----------H01L27/04 | ..其衬底为半导体的 |
| ------------H01L27/06 | ...在非重复结构中包括有多个单个组件的 |
| --------------H01L27/105 | ....包含场效应组件的 |
| ----------------H01L27/112 | .....只读存储器结构的 |
| ------------------H01L27/115 | ......电动编程只读存储器 |
| --------------------H01L27/11502 | .......具有铁电体存储器电容器的 |
| ----------------------H01L27/11578 | ........以三维布置为特征的，例如，单元胞在不同的高度层 |