发明申请
WO2018149777A1 ELECTRON-BEAM LITHOGRAPHY PROCESS ADAPTED FOR A SAMPLE COMPRISING AT LEAST ONE FRAGILE NANOSTRUCTURE
审中-公开
基本信息:
- 专利标题： ELECTRON-BEAM LITHOGRAPHY PROCESS ADAPTED FOR A SAMPLE COMPRISING AT LEAST ONE FRAGILE NANOSTRUCTURE
- 申请号：PCT/EP2018/053398 申请日：2018-02-12
- 公开(公告)号：WO2018149777A1 公开(公告)日：2018-08-23
- 发明人： MAITRE, Agnès , DHAWAN, Amit Raj , SENELLART, Pascale , BELACEL, Cherif
- 申请人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE , SORBONNE UNIVERSITE
- 申请人地址： 3 rue Michel-Ange 75016 PARIS FR
- 专利权人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE,SORBONNE UNIVERSITE
- 当前专利权人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE,SORBONNE UNIVERSITE
- 当前专利权人地址： 3 rue Michel-Ange 75016 PARIS FR
- 代理机构： PONTET ALLANO & ASSOCIES
- 优先权： EP17305169.9 20170215
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; B82Y40/00 ; G02B21/00 ; G01N21/64 ; G03F9/00 ; H01J37/317 ; H01J37/26
摘要：
The invention concerns a lithography process on a sample (2) comprising at least one structure (1) and covered by at least a lower layer (3) of resist and a upper layer (4) of resist the process comprising: thanks to an optical device (8), and imaging or determining, in a referential of the optical device, a position of the selected structure (1) and positions of markers integral with the sample (2); thanks to an electron-beam device, imaging or determining the position of each marker in a referential of the electron-beam device; deducing the position of the selected structure (1) in the referential of the electron-beam device; exposing to an electron beam the upper layer (4) of resist above the position of the selected structure (1) in order to remove all the thickness of the upper layer (4) of resist above the position of the selected structure (1) but no part or only a non-complete part of the thickness of the lower layer (3) of resist above the position of the selected structure (1).