基本信息:
- 专利标题： AMORPHOUS OXIDE SEMICONDUCTOR MEMORY DEVICES
- 申请号：PCT/US2016/068659 申请日：2016-12-27
- 公开(公告)号：WO2018125034A1 公开(公告)日：2018-07-05
- 发明人： LE, Van H. , SHARMA, Abhishek A. , DEWEY, Gilbert , PILLARISETTY, Ravi , SHIVARAMAN, Shriram , WANG, Yih , KAVALIEROS, Jack T. , GHANI, Tahir
- 申请人： INTEL CORPORATION
- 申请人地址： 2200 Mission College Boulevard Santa Clara, California 95054 US
- 专利权人： INTEL CORPORATION
- 当前专利权人： INTEL CORPORATION
- 当前专利权人地址： 2200 Mission College Boulevard Santa Clara, California 95054 US
- 代理机构： SMITH, Paul A.
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L21/768 ; H01L29/78
摘要：
Integrated circuit structures are described that include back end memory devices that are integrated into one or more back end interconnect layers of an integrated circuit. Examples of the back end memory devices described include one transistor and one capacitor ("1T/1C") memory cell devices that use an oxide semiconductor layer (e.g., indium gallium zinc oxide) as an element of the transistor portion (1T) of the back end memory cell. This produces a memory device with a low off state leakage current, improving memory device performance while also reducing memory device size.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
| --------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
| ----------H01L27/04 | ..其衬底为半导体的 |
| ------------H01L27/06 | ...在非重复结构中包括有多个单个组件的 |
| --------------H01L27/105 | ....包含场效应组件的 |
| ----------------H01L27/108 | .....动态随机存取存储结构的 |