基本信息:
- 专利标题： GERMANIUM DEVICES ON AMORPHOUS SUBSTRATES
- 专利标题（中）：锗器件在非晶衬底上的应用
- 申请号：PCT/US2017/027447 申请日：2017-04-13
- 公开(公告)号：WO2017180892A1 公开(公告)日：2017-10-19
- 发明人： PEARSON, Brian , MICHEL, Jurgen , KIMERLING, Lionel
- 申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- 申请人地址： 77 Massachusetts Ave Cambridge, Massachusetts 02139 US
- 专利权人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- 当前专利权人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- 当前专利权人地址： 77 Massachusetts Ave Cambridge, Massachusetts 02139 US
- 代理机构： COLICE, Christopher Max et al.
- 优先权： US62/321,957 20160413
- 主分类号： C30B25/00
- IPC分类号： C30B25/00 ; C30B29/08
摘要：
A germanium metal-semiconductor-metal (MSM) photodetector is fabricated by growing crystalline germanium from an amorphous silicon seed, supported by an amorphous substrate, at a temperature of about 450 C. In this fabrication, crystalline Ge is grown via selective deposition in geometrically confined channels, where amorphous silicon is disposed as the growth seed. Ge growth extends from the growth seed along the channels to a lithographically defined trench. The Ge emerging out of the channels includes crystalline grains that coalesce to fill the trench, forming a Ge strip that can be used as the active area of a photodetector. One or more Schottky contacts can be formed by a thin tunneling layer (e.g., A1 2 O 3 ) deposited on the Ge strip and metal contracts formed on the tunneling layer.
摘要（中）：
锗金属 - 半导体 - 金属（MSM）光电探测器通过在约450℃的温度下从由无定形衬底支撑的非晶硅籽晶生长结晶锗来制造。在该制造中，晶体 Ge是通过选择性沉积生长在几何限定的沟道中，其中非晶硅作为生长种子处理。 Ge生长从生长种子沿着通道延伸到光刻定义的沟槽。 从沟道中出来的Ge包括结晶的晶粒，它们聚结起来填充沟槽，形成可以用作光电探测器有源区域的Ge带。 一个或多个肖特基接触可以通过沉积在Ge带上的薄隧穿层（例如，Al 2 O 3：O 3）和在隧穿层上形成的金属合约形成。 / p>