基本信息:
- 专利标题： SEQUENTIAL LASER FIRING FOR THIN FILM PROCESSING
- 专利标题（中）：用于薄膜处理的顺序激光扫描
- 申请号：PCT/US2015/016552 申请日：2015-02-19
- 公开(公告)号：WO2015127031A1 公开(公告)日：2015-08-27
- 发明人： IM, James, S. , YU, Miao
- 申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
- 申请人地址： 412 Low Memorial Library 535 West 116th Street New York, NY 10027 US
- 专利权人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
- 当前专利权人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
- 当前专利权人地址： 412 Low Memorial Library 535 West 116th Street New York, NY 10027 US
- 代理机构： PACELLI, Andrea et al.
- 优先权： US61/941,795 20140219; US61/941,796 20140219; US61/941,790 20140219
- 主分类号： C30B13/24
- IPC分类号： C30B13/24 ; H01L21/00 ; H01L21/02 ; H01L21/268
摘要：
The present disclosure is directed to methods and systems for processing a thin film. An exemplary method can include irradiating a first region of the thin film with a first laser pulse with a first energy density sufficient to partially melt the first region and cause crystal grain lateral growth from a seed region within the first region after the first laser pulse and irradiating the first region of the thin film with at least one sequential laser pulse with a time interval after the first laser pulse and a second energy density sufficient to delay crystal nucleation and extend lateral crystal growth within the first region without partially melting the film.
摘要（中）：
本公开涉及用于处理薄膜的方法和系统。 示例性方法可以包括用第一能量密度的第一激光脉冲照射薄膜的第一区域，该第一激光脉冲足以部分地熔化第一区域并在第一激光脉冲之后引起第一区域内的种子区域的晶粒横向生长，以及 用第一激光脉冲之后的时间间隔的至少一个顺序的激光脉冲照射薄膜的第一区域，以及足以延迟晶体成核并延长第一区域内的横向晶体生长而不使膜部分熔化的第二能量密度。