基本信息:
- 专利标题： RESISTANCE CHANGE MEMORY
- 专利标题（中）：电阻变化记忆
- 申请号：PCT/JP2014/057026 申请日：2014-03-11
- 公开(公告)号：WO2014148405A1 公开(公告)日：2014-09-25
- 发明人： TAKAHASHI, Masahiro , KATAYAMA, Akira , KIM, Dong Keun , OH, Byoung Chan
- 申请人： TAKAHASHI, Masahiro , KATAYAMA, Akira , KIM, Dong Keun , OH, Byoung Chan
- 申请人地址： c/o IP Division, 35th floor, 1-1, Shibaura 1-chome, Minato-ku, Tokyo 1058001 JP
- 专利权人： TAKAHASHI, Masahiro,KATAYAMA, Akira,KIM, Dong Keun,OH, Byoung Chan
- 当前专利权人： TAKAHASHI, Masahiro,KATAYAMA, Akira,KIM, Dong Keun,OH, Byoung Chan
- 当前专利权人地址： c/o IP Division, 35th floor, 1-1, Shibaura 1-chome, Minato-ku, Tokyo 1058001 JP
- 代理机构： KURATA, Masatoshi et al.
- 优先权： US61/804,557 20130322; US14/018,242 20130904
- 主分类号： G11C11/15
- IPC分类号： G11C11/15 ; G11C13/00
摘要：
According to one embodiment, a resistance change memory includes a memory cell, a sense amplifier and a global bit line. The memory cell is disposed at a location where a local bit line and a word line intersect each other. The memory cell is connected to both the local bit line and the word line. The sense amplifier reads data stored on the memory cell by supplying a read current to the memory cell. The global bit line is connected between the local bit line and the sense amplifier. The global bit line feeds the read current supplied by the sense amplifier to the local bit line. The sense amplifier charges the global bit line, before the local bit line and the global bit line are connected to each other.
摘要（中）：
根据一个实施例，电阻变化存储器包括存储单元，读出放大器和全局位线。 存储单元设置在局部位线和字线相交的位置。 存储单元连接到本地位线和字线。 读出放大器通过向存储单元提供读取电流来读取存储在存储单元上的数据。 全局位线连接在本地位线和读出放大器之间。 全局位线将由读出放大器提供的读取电流馈送到本地位线。 在本地位线和全局位线彼此连接之前，读出放大器对全局位线进行充电。
IPC结构图谱:
| G11C11/56 | 组优先于G11C11/02至G11C11/54中各组。 |
| --G11C11/02 | .应用磁性元件的 |
| ----G11C11/14 | ..应用薄膜元件的 |
| ------G11C11/15 | ...应用多层磁性层的 |