发明申请
WO2013116320A2 METHOD OF MAKING PHOTOVOLTAIC DEVICES WITH REDUCED CONDUCTION BAND OFFSET BETWEEN PNICTIDE ABSORBER FILMS AND EMITTER FILMS
审中-公开
基本信息:
- 专利标题： METHOD OF MAKING PHOTOVOLTAIC DEVICES WITH REDUCED CONDUCTION BAND OFFSET BETWEEN PNICTIDE ABSORBER FILMS AND EMITTER FILMS
- 专利标题（中）：制造具有降低的PN光吸收膜和发射极膜之间的导带偏移的光伏器件的方法
- 申请号：PCT/US2013023819 申请日：2013-01-30
- 公开(公告)号：WO2013116320A2 公开(公告)日：2013-08-08
- 发明人： BOSCO JEFFREY P , KIMBALL GREGORY M , ATWATER HARRY A , LEWIS NATHAN S , KRISTINE-LIGMAN FEIST REBEKAH , DEGROOT MARTY W
- 申请人： DOW GLOBAL TECHNOLOGIES LLC , CALIFORNIA INST OF TECHN , BOSCO JEFFREY P , KIMBALL GREGORY M , ATWATER HARRY A , LEWIS NATHAN S , KRISTINE-LIGMAN FEIST REBEKAH , DEGROOT MARTY W
- 专利权人： DOW GLOBAL TECHNOLOGIES LLC,CALIFORNIA INST OF TECHN,BOSCO JEFFREY P,KIMBALL GREGORY M,ATWATER HARRY A,LEWIS NATHAN S,KRISTINE-LIGMAN FEIST REBEKAH,DEGROOT MARTY W
- 当前专利权人： DOW GLOBAL TECHNOLOGIES LLC,CALIFORNIA INST OF TECHN,BOSCO JEFFREY P,KIMBALL GREGORY M,ATWATER HARRY A,LEWIS NATHAN S,KRISTINE-LIGMAN FEIST REBEKAH,DEGROOT MARTY W
- 优先权： US201261592957 2012-01-31
- 主分类号： H01L31/18
- IPC分类号： H01L31/18
摘要：
The principles of the present invention are used to reduce the conduction band offset between chalcogenide emitter and pnictide absorber films. Alternatively stated, the present invention provides strategies to more closely match the electron affinity characteristics between the absorber and emitter components. The resultant photovoltaic devices have the potential to have higher efficiency and higher open circuit voltage. The resistance of the resultant junctions would be lower with reduced current leakage. In illustrative modes of practice, the present invention incorporates one or more tuning agents into the emitter layer in order to adjust the electron affinity characteristics, thereby reducing the conduction band offset between the emitter and the absorber. In the case of an n-type emitter such as ZnS or a tertiary compound such as zinc sulfide selenide (optionally doped with Al) or the like, an exemplary tuning agent is Mg when the absorber is a p-type pnictide material such as zinc phosphide or an alloy of zinc phosphide incorporating at least one additional metal in addition to Zn and optionally at least one non-metal in addition to phosphorus. Consequently, photovolotaic devices incorporating such films would demonstrate improved electronic performance.
摘要（中）：
本发明的原理用于降低硫族化合物发射器与磷酸酯吸收剂膜之间的导带偏移。 换言之，本发明提供了更接近地匹配吸收器和发射器组件之间的电子亲和特性的策略。 所得到的光伏器件具有更高的效率和更高的开路电压的潜力。 随着电流泄漏减少，所得到的结点的电阻将会降低。 在示例性实践模式中，本发明将一种或多种调谐剂结合到发射极层中，以便调整电子亲和特性，由此减小发射器和吸收器之间的导带偏移。 在诸如ZnS的n型发射体或诸如硫化锌硒化物（任选地掺杂有Al）等的三元化合物的情况下，当吸收体是诸如锌的p型磷化物材料时，示例性调谐剂是Mg 磷化物或磷化锌的合金，除了Zn之外还加入至少一种附加金属，并且除了磷之外还可选地加入至少一种非金属。 因此，包含这种薄膜的光伏设备将表现出改进的电子性能。