发明申请
WO2012166405A1 LOW TEMPERATURE CO-FIRED CERAMIC STRUCTURE FOR HIGH FREQUENCY APPLICATIONS AND PROCESS FOR MAKING SAME
审中-公开
基本信息:
- 专利标题： LOW TEMPERATURE CO-FIRED CERAMIC STRUCTURE FOR HIGH FREQUENCY APPLICATIONS AND PROCESS FOR MAKING SAME
- 专利标题（中）：用于高频应用的低温共烧陶瓷结构及其制造方法
- 申请号：PCT/US2012/038765 申请日：2012-05-21
- 公开(公告)号：WO2012166405A1 公开(公告)日：2012-12-06
- 发明人： HUGHES, Elizabeth D , MALERBI, Joao Carlos , NAIR, Deepukumar M. , NAIR, Kumaran Manikantan , PARISI, James M. , SMITH, Michael Arnett , SOUDERS, Ken E.
- 申请人： E. I. DU PONT DE NEMOURS AND COMPANY , GORDON, Scott E , HUGHES, Elizabeth D , MALERBI, Joao Carlos , NAIR, Deepukumar M. , NAIR, Kumaran Manikantan , PARISI, James M. , SMITH, Michael Arnett , SOUDERS, Ken E.
- 申请人地址： 1007 Market Street Wilmington, Delaware 19899 US
- 专利权人： E. I. DU PONT DE NEMOURS AND COMPANY,GORDON, Scott E,HUGHES, Elizabeth D,MALERBI, Joao Carlos,NAIR, Deepukumar M.,NAIR, Kumaran Manikantan,PARISI, James M.,SMITH, Michael Arnett,SOUDERS, Ken E.
- 当前专利权人： E. I. DU PONT DE NEMOURS AND COMPANY,GORDON, Scott E,HUGHES, Elizabeth D,MALERBI, Joao Carlos,NAIR, Deepukumar M.,NAIR, Kumaran Manikantan,PARISI, James M.,SMITH, Michael Arnett,SOUDERS, Ken E.
- 当前专利权人地址： 1007 Market Street Wilmington, Delaware 19899 US
- 代理机构： HAAS, Charles W.
- 优先权： US61/492,024 20110601
- 主分类号： H01L23/15
- IPC分类号： H01L23/15 ; H01L23/498 ; H05K1/03 ; H05K3/46
摘要：
Disclosed herein is a multilayer low temperature co-fired ceramic (LTCC) structure comprising a multilayer low temperature co-fired ceramic comprising glass-ceramic dielectric layers with screen printed thick film inner conductors on portions of the layers and with thin film outer conductors deposited on the upper and lower outer surfaces of the LTCC. At least a portion of the thin film outer conductors is patterned in the form of lines and the spacings between the lines are less then 50 m. Also disclosed is a process for making the LTCC structure.
摘要（中）：
本文公开了一种多层低温共烧陶瓷（LTCC）结构，其包括多层低温共烧陶瓷，其包含玻璃陶瓷电介质层，在层的一部分上具有丝网印刷厚膜内导体，并且薄膜外导体沉积在 LTCC的上下外表面。 薄膜外导体的至少一部分以线的形式图案化，并且线之间的间距小于50μm。 还公开了制造LTCC结构的方法。
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/02 | .容器；封接 |
| ----------H01L23/14 | ..按其材料或它的电性能区分的 |
| ------------H01L23/15 | ...陶瓷或玻璃衬底 |