基本信息:
- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）：半导体器件及其制造方法
- 申请号：PCT/IB2012/000773 申请日：2012-04-18
- 公开(公告)号：WO2012143784A2 公开(公告)日：2012-10-26
- 发明人： KADOGUCHI, Takuya , IWASAKI, Shingo , KAWASHIMA, Takanori , OKUMURA, Tomomi , NISHIHATA, Masayoshi
- 申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA , DENSO CORPORATION , KADOGUCHI, Takuya , IWASAKI, Shingo , KAWASHIMA, Takanori , OKUMURA, Tomomi , NISHIHATA, Masayoshi
- 申请人地址： 1, Toyota-cho, Toyota-shi, Aichi-ken, 471-8571 JP
- 专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION,KADOGUCHI, Takuya,IWASAKI, Shingo,KAWASHIMA, Takanori,OKUMURA, Tomomi,NISHIHATA, Masayoshi
- 当前专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION,KADOGUCHI, Takuya,IWASAKI, Shingo,KAWASHIMA, Takanori,OKUMURA, Tomomi,NISHIHATA, Masayoshi
- 当前专利权人地址： 1, Toyota-cho, Toyota-shi, Aichi-ken, 471-8571 JP
- 优先权： JP2011-093334 20110419; JP2011-281695 20111222
- 主分类号： H01L23/495
- IPC分类号： H01L23/495
摘要：
A semiconductor device includes a first semiconductor element (10); a first thick plate portion (31) that is electrically connected to an electrode (11) on a lower surface side of the first semiconductor element, and is formed by a conductor; a second semiconductor element (20) that is arranged such that a main surface of the second semiconductor element faces a main surface of the first semiconductor element; a second thick plate portion (32) that is electrically connected to an electrode (21) on a lower surface side of the second semiconductor element, and is formed by a conductor; a third thick plate portion (41) that is electrically connected to an electrode (12) on an upper surface side of the first semiconductor element, and is formed by a conductor; a fourth thick plate portion (42) that is electrically connected to an electrode (22) on an upper surface side of the second semiconductor element, and is formed by a conductor; a first thin plate portion (33, 34) that is provided on the second thick plate portion, is formed by a conductor, and is thinner than the second thick plate portion; and a second thin plate portion (43, 44) that is provided on the third thick plate portion, is formed by a conductor, and is thinner than the third thick plate portion. The first thin plate portion and the second thin plate portion are fixed together and electrically connected.
摘要（中）：
半导体器件包括第一半导体元件（10）; 与第一半导体元件的下表面侧的电极（11）电连接并由导体形成的第一厚板部（31） 第二半导体元件（20），被布置成使得所述第二半导体元件的主表面面对所述第一半导体元件的主表面; 与所述第二半导体元件的下表面侧的电极（21）电连接并由导体形成的第二厚板部（32） 与第一半导体元件的上表面侧的电极（12）电连接并由导体形成的第三厚板部（41） 与第二半导体元件的上表面侧的电极（22）电连接并由导体形成的第四厚板部（42） 设置在第二厚板部分上的第一薄板部分（33,34）由导体形成，并且比第二厚板部分薄; 并且设置在第三厚板部分上的第二薄板部分（43,44）由导体形成，并且比第三厚板部分薄。 第一薄板部分和第二薄板部分固定在一起并电连接。
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/34 | .冷却装置；加热装置；通风装置或温度补偿装置 |
| ----------H01L23/482 | ..由不可拆卸地施加到半导体本体上的内引线组成的 |
| ------------H01L23/495 | ...引线框架的 |