基本信息:
- 专利标题： VOID-FREE WAFER BONDING USING CHANNELS
- 专利标题（中）：无通道波形使用通道
- 申请号：PCT/US2011/064884 申请日：2011-12-14
- 公开(公告)号：WO2012082881A2 公开(公告)日：2012-06-21
- 发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , SAVALIA, Piyush , MITCHELL, Craig
- 申请人： TESSERA, INC. , OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , SAVALIA, Piyush , MITCHELL, Craig
- 申请人地址： 3025 Orchard Parkway San Jose, CA 95134 US
- 专利权人： TESSERA, INC.,OGANESIAN, Vage,HABA, Belgacem,MOHAMMED, Ilyas,SAVALIA, Piyush,MITCHELL, Craig
- 当前专利权人： TESSERA, INC.,OGANESIAN, Vage,HABA, Belgacem,MOHAMMED, Ilyas,SAVALIA, Piyush,MITCHELL, Craig
- 当前专利权人地址： 3025 Orchard Parkway San Jose, CA 95134 US
- 代理机构： CAPATI, April, M. et al.
- 优先权： US12/970,529 20101216
- 主分类号： H01L21/98
- IPC分类号： H01L21/98
摘要：
A method of bonding first and second microelectronic elements includes pressing together a first substrate 100 containing active circuit elements 108 therein with a second substrate 112, with a flowable dielectric material 102 between confronting surfaces of the respective substrates, each of the first and second substrates 100,112 having a coefficient of thermal expansion less than 10 parts per million/ °C, at least one of the confronting surfaces having a plurality of channels 118A-118F extending from an edge of such surface, such that the dielectric material 102 between planes defined by the confronting surfaces is at least substantially free of voids and has a thickness over one micron, and at least some of the dielectric material 102 flows into at least some of the channels.
摘要（中）：
接合第一和第二微电子元件的方法包括将含有有源电路元件108的第一基板100与第二基板112压在一起，在相应基板的相对表面之间具有可流动介电材料102，第一和第二基板100,112中的每一个 具有小于10ppm /℃的热膨胀系数，至少一个相对表面具有从该表面的边缘延伸的多个通道118A-118F，使得介电材料102在由 面对的表面至少基本上没有空隙并且具有超过一微米的厚度，并且至少一些介电材料102流入至少一些通道。