基本信息:
- 专利标题： LATTICE MATCHABLE ALLOY FOR SOLAR CELLS
- 专利标题（中）：太阳能电池适用合金
- 申请号：PCT/US2010/061635 申请日：2010-12-21
- 公开(公告)号：WO2011123164A1 公开(公告)日：2011-10-06
- 发明人： JONES, Rebecca Elizabeth , YUEN, Homan Bernard , LIU, Ting , MISRA, Pranob
- 申请人： SOLAR JUNCTION CORPORATION , JONES, Rebecca Elizabeth , YUEN, Homan Bernard , LIU, Ting , MISRA, Pranob
- 申请人地址： 401 Charcot Avenue San Jose, California 95131 US
- 专利权人： SOLAR JUNCTION CORPORATION,JONES, Rebecca Elizabeth,YUEN, Homan Bernard,LIU, Ting,MISRA, Pranob
- 当前专利权人： SOLAR JUNCTION CORPORATION,JONES, Rebecca Elizabeth,YUEN, Homan Bernard,LIU, Ting,MISRA, Pranob
- 当前专利权人地址： 401 Charcot Avenue San Jose, California 95131 US
- 代理机构： ALLEN, Kenneth R. et al.
- 优先权： US12/749,076 20100329
- 主分类号： H01L31/00
- IPC分类号： H01L31/00
摘要：
An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga 1 - x In x N y As 1-y-z Sb z with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga 1 - x In x N y As 1-y-z Sb z are 0.07 ≤ x ≤ 0.18, 0.025 ≤ y ≤ 0.04 and 0.001 ≤ z ≤ 0.03.
摘要（中）：
提供了具有至少0.9eV的带隙，即具有低锑（Sb）含量和增强的铟（In）含量和增强氮的Ga1-xInxNyAs1-y-zSbz的太阳能电池的子电池的合金组合物 （N）含量，实现了与GaAs和Ge衬底的实质晶格匹配，并在GaInNASSb子电池中为多结太阳能电池提供高短路电流和高开路电压。 Ga1-xInxNyAs1-y-zSbz的组成范围为0.07 = x = 0.18,0.025 = y = 0.04和0.001 = z = 0.03。