基本信息:
- 专利标题： METHODS OF FORMING A THIN-FILM SOLAR ENERGY DEVICE
- 申请号：PCT/US2011/027676 申请日：2011-03-09
- 公开(公告)号：WO2011119332A3 公开(公告)日：2011-09-29
- 发明人： SHENG, Shuran , CHAE, Yong Kee
- 申请人： APPLIED MATERIALS, INC. , SHENG, Shuran , CHAE, Yong Kee
- 申请人地址： 3050 Bowers Avenue Santa Clara, California 95054 US
- 专利权人： APPLIED MATERIALS, INC.,SHENG, Shuran,CHAE, Yong Kee
- 当前专利权人： APPLIED MATERIALS, INC.,SHENG, Shuran,CHAE, Yong Kee
- 当前专利权人地址： 3050 Bowers Avenue Santa Clara, California 95054 US
- 代理机构： PATTERSON, B., Todd et al.
- 优先权： US12/729,777 20100323
- 主分类号： H01L31/18
- IPC分类号： H01L31/18 ; H01L31/042
摘要：
A method and apparatus for making solar cell active layers is provided. A doped microcrystalline semiconductor layer is formed with a bandgap-enhancing alloy material at low hydrogen flow rates. Deposition conditions are established at a low flowrate of the semiconductor source and ramped to a high flowrate as a first sublayer is deposited. The bandgap-enhancing alloy material is added to the reaction mixture to deposit a second sublayer. The bandgap-enhancing alloy material may optionally be stopped to deposit a third sublayer.