基本信息:
- 专利标题： SILICON NITRIDE PASSIVATION LAYER FOR COVERING HIGH ASPECT RATIO FEATURES
- 专利标题（中）：用于覆盖高比例特征的硅氮钝化层
- 申请号：PCT/US2011/028531 申请日：2011-03-15
- 公开(公告)号：WO2011115997A2 公开(公告)日：2011-09-22
- 发明人： RAJAGOPALAN, Nagarajan , HAN, Xinhai , YAMASE, Ryan , PARK, Ji Ae , PATEL, Shamik , NOWAK, Thomas , CUI, Zhengjiang , NAIK, Mehul , PARK, Heung Lak , DING, Ran , KIM, Bok Hoen
- 申请人： APPLIED MATERIALS, INC. , RAJAGOPALAN, Nagarajan , HAN, Xinhai , YAMASE, Ryan , PARK, Ji Ae , PATEL, Shamik , NOWAK, Thomas , CUI, Zhengjiang , NAIK, Mehul , PARK, Heung Lak , DING, Ran , KIM, Bok Hoen
- 申请人地址： 3050 Bowers Avenue Santa Clara, California 95054 US
- 专利权人： APPLIED MATERIALS, INC.,RAJAGOPALAN, Nagarajan,HAN, Xinhai,YAMASE, Ryan,PARK, Ji Ae,PATEL, Shamik,NOWAK, Thomas,CUI, Zhengjiang,NAIK, Mehul,PARK, Heung Lak,DING, Ran,KIM, Bok Hoen
- 当前专利权人： APPLIED MATERIALS, INC.,RAJAGOPALAN, Nagarajan,HAN, Xinhai,YAMASE, Ryan,PARK, Ji Ae,PATEL, Shamik,NOWAK, Thomas,CUI, Zhengjiang,NAIK, Mehul,PARK, Heung Lak,DING, Ran,KIM, Bok Hoen
- 当前专利权人地址： 3050 Bowers Avenue Santa Clara, California 95054 US
- 代理机构： JANAH, Ashok K.
- 优先权： US12/724,396 20100315
- 主分类号： H01L21/318
- IPC分类号： H01L21/318 ; H01L21/60
摘要：
A method of forming a passivation layer comprising silicon nitride on features of a substrate is described. In a first stage of the deposition method, a dielectric deposition gas, comprising a silicon-containing gas and a nitrogen-containing gas, is introduced into the process zone and energized to deposit a silicon nitride layer. In a second stage, a treatment gas, having a different composition than that of the dielectric deposition gas, is introduced into the process zone and energized to treat the silicon nitride layer. The first and second stages can be performed a plurality of times.
摘要（中）：
描述了在衬底的特征上形成包括氮化硅的钝化层的方法。 在沉积方法的第一阶段中，将包含含硅气体和含氮气体的介电沉积气体引入工艺区域并通电以沉积氮化硅层。 在第二阶段中，将具有不同于介电沉积气体的组成不同的处理气体引入处理区并通电以处理氮化硅层。 第一和第二阶段可以执行多次。
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割 |
| ------------------H01L21/314 | ......无机层 |
| --------------------H01L21/318 | .......由氮化物组成的无机层 |