基本信息:
- 专利标题： STRAIN-BALANCED EXTENDED-WAVELENGTH BARRIER DETECTOR
- 专利标题（中）：应变平衡扩展波长检测器
- 申请号：PCT/US2010/042168 申请日：2010-07-15
- 公开(公告)号：WO2011008979A2 公开(公告)日：2011-01-20
- 发明人： SCOTT, Jeff , PALOCZI, George
- 申请人： LOCKHEED MARTIN CORPORATION , SCOTT, Jeff , PALOCZI, George
- 申请人地址： 6801 Rockledge Drive Bethesda, Maryland 20817 US
- 专利权人： LOCKHEED MARTIN CORPORATION,SCOTT, Jeff,PALOCZI, George
- 当前专利权人： LOCKHEED MARTIN CORPORATION,SCOTT, Jeff,PALOCZI, George
- 当前专利权人地址： 6801 Rockledge Drive Bethesda, Maryland 20817 US
- 代理机构： MUTTER, Michael K.
- 优先权： US61/213,816 20090717
- 主分类号： H01L31/101
- IPC分类号： H01L31/101
摘要：
A strain-balanced photodetector is provided for detecting infrared light at an extended cutoff wavelength in the range of 4.5 µm or more. An InAsSb absorber layer has an Sb content is grown in a lattice-mismatched condition to a GaSb substrate, and a plurality of GaAs strain-compensating layers are interspersed within the absorber layer to balance the strain of the absorber layer due to the lattice mismatch. The strain-compensation layers allow the absorber to achieve a thickness exhibiting sufficient absorption efficiency while extending the cutoff wavelength beyond that possible in a lattice-matched state. Additionally, the strain-compensation layers are sufficiently thin to be substantially quantum-mechanically transparent such that they do not substantially affect the transmission efficiency of the absorber. The photodetector is preferably formed as a majority carrier filter photodetector exhibiting minimal dark current, and may be provided individually or in a focal plane array.
摘要（中）：
提供一种应变平衡光电检测器，用于检测在4.5μm或更大的范围内的延长截止波长的红外光。 具有Sb含量的InAsSb吸收层在GaSb衬底中以格子失配的条件生长，并且多个GaAs应变补偿层散布在吸收层内，以平衡由于晶格失配引起的吸收层的应变。 应变补偿层允许吸收体实现具有足够吸收效率的厚度，同时将截止波长延伸超过晶格匹配状态可能的截止波长。 此外，应变补偿层足够薄以使其基本上是量子力学上透明的，使得它们基本上不影响吸收体的传输效率。 优选地，光电检测器形成为显示最小暗电流的多数载波滤波器光电检测器，并且可以单独地或在焦平面阵列中提供。