基本信息:
- 专利标题： HIGH-SENSITIVITY NANOSCALE WIRE SENSORS
- 专利标题（中）：高灵敏性纳米线传感器
- 申请号：PCT/US2007/024126 申请日：2007-11-19
- 公开(公告)号：WO2008127314A1 公开(公告)日：2008-10-23
- 发明人： LIEBER, Charles, M. , GAO, Xuan, P.a. , ZHENG, Gengfeng
- 申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE , LIEBER, Charles, M. , GAO, Xuan, P.a. , ZHENG, Gengfeng
- 申请人地址： 17 Quincy Street Cambridge, MA 02138 US
- 专利权人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE,LIEBER, Charles, M.,GAO, Xuan, P.a.,ZHENG, Gengfeng
- 当前专利权人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE,LIEBER, Charles, M.,GAO, Xuan, P.a.,ZHENG, Gengfeng
- 当前专利权人地址： 17 Quincy Street Cambridge, MA 02138 US
- 代理机构： OYER, Timothy, J.
- 优先权： US60/860,586 20061122
- 主分类号： G01N27/414
- IPC分类号： G01N27/414
摘要：
The present invention generally relates to nanoscale wire devices and methods for use in determining analytes suspected to be present in a sample. The invention provides a nanoscale wire that has improved sensitivity, as the carrier concentration in the wire is controlled by an external gate voltage, such that the nanoscale wire has a Debye screening length that is greater than the average cross- sectional dimension of the nanoscale wire when the nanoscale wire is exposed to a solution suspected of containing an analyte. This Debye screening length ( lambda) associated with the carrier concentration (p) inside nanoscale wire is adjusted by adjusting the gate voltage applied to an FET structure, such that the carriers in the nanoscale wire are depleted.
摘要（中）：
本发明一般涉及用于确定疑似存在于样品中的分析物的纳米级线器件和方法。 本发明提供一种具有改进的灵敏度的纳米线，因为线中的载流子浓度由外部栅极电压控制，使得纳米级线具有大于纳米线的平均横截面尺寸的德拜筛选长度 当纳米线被暴露于怀疑含有分析物的溶液时。 通过调整施加到FET结构的栅极电压来调节与纳米线内的载流子浓度（p）相关联的德拜筛选长度（λ），使得纳米线中的载流子耗尽。
IPC结构图谱:
| G | 物理 |
| --G01 | 测量；测试 |
| ----G01N | 借助于测定材料的化学或物理性质来测试或分析材料 |
| ------G01N27/00 | 用电、电化学或磁的方法测试或分析材料 |
| --------G01N27/02 | .通过测试阻抗 |
| ----------G01N27/28 | ..电解池部件 |
| ------------G01N27/414 | ...对离子敏感的场效应晶体管或化学场效应晶体管，即ISFETS或CHEMFETS |