基本信息:
- 专利标题： NON-UNIFORM SWITCHING BASED NON-VOLATILE MAGNETIC BASED MEMORY
- 专利标题（中）：基于非均匀开关的非易失性磁性存储器
- 申请号：PCT/US2008/053619 申请日：2008-02-11
- 公开(公告)号：WO2008100868A2 公开(公告)日：2008-08-21
- 发明人： RANJAN, Rajiv Yadav , ESTAKHRI, Petro , ASSAR, Mahmud , KESHTBOD, Parviz
- 申请人： YADAV TECHNOLOGY, INC. , RANJAN, Rajiv Yadav , ESTAKHRI, Petro , ASSAR, Mahmud , KESHTBOD, Parviz
- 申请人地址： 48430 Lakeview Boulevard Fremont, CA 94539 US
- 专利权人： YADAV TECHNOLOGY, INC.,RANJAN, Rajiv Yadav,ESTAKHRI, Petro,ASSAR, Mahmud,KESHTBOD, Parviz
- 当前专利权人： YADAV TECHNOLOGY, INC.,RANJAN, Rajiv Yadav,ESTAKHRI, Petro,ASSAR, Mahmud,KESHTBOD, Parviz
- 当前专利权人地址： 48430 Lakeview Boulevard Fremont, CA 94539 US
- 代理机构： IMAM, Maryam
- 优先权： US11/674,124 20070212
- 主分类号： G11C11/14
- IPC分类号： G11C11/14 ; H01L21/8239
摘要：
One embodiment of the present invention includes a non-uniform switching based non-volatile magnetic memory element including a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer, wherein switching current is applied, in a direction that is substantially perpendicular to the fixed, barrier, first free, non-uniform and the second free layers causing switching between states of the first, second free and non-uniform layers with substantially reduced switching current.
摘要（中）：
本发明的一个实施例包括：非均匀的基于开关的非易失性磁存储元件，其包括固定层，形成在固定层顶部的阻挡层，形成在阻挡层顶部上的第一自由层， 形成在第一自由层的顶部上的均匀开关层（NSL）和形成在非均匀开关层顶部的第二自由层，其中施加开关电流，其基本上垂直于固定屏障的方向， 第一自由，不均匀和第二自由层引起第一，第二自由和非均匀层的状态之间的切换，其开关电流大大降低。