基本信息:
- 专利标题: METHOD FOR DEPOSITION OF MAGNESIUM DOPED (AL, IN, GA, B)N LAYERS
- 专利标题(中):沉积方法(AL,IN,GA,B)N层
- 申请号:PCT/US2007/018074 申请日:2007-08-16
- 公开(公告)号:WO2008021403A2 公开(公告)日:2008-02-21
- 发明人: IZA, Michael , SATO, Hitoshi , DENBAARS, Steven, P. , NAKAMURA, Shuji
- 申请人: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , IZA, Michael , SATO, Hitoshi , DENBAARS, Steven, P. , NAKAMURA, Shuji
- 申请人地址: 12th Floor 1111 Franklin Street Oakland, CA 94607 US
- 专利权人: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA,IZA, Michael,SATO, Hitoshi,DENBAARS, Steven, P.,NAKAMURA, Shuji
- 当前专利权人: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA,IZA, Michael,SATO, Hitoshi,DENBAARS, Steven, P.,NAKAMURA, Shuji
- 当前专利权人地址: 12th Floor 1111 Franklin Street Oakland, CA 94607 US
- 代理机构: GATES, George, H.
- 优先权: US60/822,600 20060816
- 主分类号: H01L21/20
- IPC分类号: H01L21/20 ; H01L29/06
摘要:
A method for growing an improved quality device by depositing a low temperature (LT) magnesium (Mg) doped nitride semiconductor thin film. The low temperature Mg doped nitride semiconductor thin film may have a thickness greater than 50nm. A multi quantum well (MQW) active layer may be grown at a growth temperature and the LT Mg doped nitride semiconductor thin film may deposited on the MQW active layer at a substrate temperature no greater than 150 °C above the growth temperature.
摘要(中):
通过沉积低温(LT)镁(Mg)掺杂的氮化物半导体薄膜来生长改进的质量器件的方法。 低温Mg掺杂的氮化物半导体薄膜可以具有大于50nm的厚度。 可以在生长温度下生长多量子阱(MQW)有源层,并且在高于生长温度的衬底温度不超过150℃的温度下,可以将LT Mg掺杂的氮化物半导体薄膜沉积在MQW有源层上。
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/20 | ....半导体材料在基片上的沉积,例如外延生长 |