发明申请
WO2007044542A2 METHOD OF REDUCING EDGE HEIGHT AT THE OVERLAP OF A LAYER DEPOSITED ON A STEPPED SUBSTRATE
审中-公开
基本信息:
- 专利标题： METHOD OF REDUCING EDGE HEIGHT AT THE OVERLAP OF A LAYER DEPOSITED ON A STEPPED SUBSTRATE
- 专利标题（中）：降低层叠叠层层叠高度的方法
- 申请号：PCT/US2006/039195 申请日：2006-10-06
- 公开(公告)号：WO2007044542A2 公开(公告)日：2007-04-19
- 发明人： ABELES, Joseph , CAPEWELL, David, R. , DIMARCO, Louis , KWAKERNAAK, Martin , MOHSENI, Hooman , WHALEY, Ralph , YANG, Liyou
- 申请人： LEE, Michael, J. , LEE, Bong, Hoon , ABELES, Joseph , CAPEWELL, David, R. , DIMARCO, Louis , KWAKERNAAK, Martin , MOHSENI, Hooman , WHALEY, Ralph , YANG, Liyou
- 申请人地址： Jung-Gu Shindang-Dong 407-8, Meister Ville 701, Seoul 100-450 KR
- 专利权人： LEE, Michael, J.,LEE, Bong, Hoon,ABELES, Joseph,CAPEWELL, David, R.,DIMARCO, Louis,KWAKERNAAK, Martin,MOHSENI, Hooman,WHALEY, Ralph,YANG, Liyou
- 当前专利权人： LEE, Michael, J.,LEE, Bong, Hoon,ABELES, Joseph,CAPEWELL, David, R.,DIMARCO, Louis,KWAKERNAAK, Martin,MOHSENI, Hooman,WHALEY, Ralph,YANG, Liyou
- 当前专利权人地址： Jung-Gu Shindang-Dong 407-8, Meister Ville 701, Seoul 100-450 KR
- 代理机构： NORTON, Todd, A.
- 优先权： US60/724,535 20051007
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A system and method for preparing a stepped substrate and an apparatus are disclosed. The method comprises depositing photoresist on a stepped substrate, removing a first portion of the photoresist, reflowing the remaining portion of the photoresist; and etching a portion of the reflowed remaining photoresist and a portion of the stepped substrate. The apparatus comprises a deposited photoresist layer on a stepped substrate, wherein a portion of the photoresist is removed, a reflowed portion of the remaining photoresist, an etched portion of the reflowed photoresist, and an etched portion of the stepped substrate. The system for preparing a stepped substrate comprises a first processing tool for depositing at a portion of photoresist on the stepped substrate, a second processing tool for removing at least a first portion of the photoresist, a third processing tool for reflowing at least a portion of the remaining portion of the photoresist, and a fourth processing tool for etching a portion of the reflowed photoresist and a portion of the stepped substrate.
摘要（中）：
公开了一种用于制备阶梯式衬底和装置的系统和方法。 该方法包括在阶梯状衬底上沉积光致抗蚀剂，去除光致抗蚀剂的第一部分，回流光致抗蚀剂的剩余部分; 并且蚀刻回流的剩余光致抗蚀剂的一部分和阶梯式衬底的一部分。 该装置包括在阶梯式衬底上的沉积的光致抗蚀剂层，其中去除一部分光致抗蚀剂，剩余光致抗蚀剂的回流部分，回流光致抗蚀剂的蚀刻部分和阶梯式衬底的蚀刻部分。 用于制备阶梯式衬底的系统包括用于在阶梯式衬底上的光致抗蚀剂的一部分上沉积的第一处理工具，用于去除光致抗蚀剂的至少第一部分的第二处理工具，用于回流至少部分光刻胶的第三处理工具 光刻胶的剩余部分和用于蚀刻回流光致抗蚀剂的一部分和阶梯状衬底的一部分的第四处理工具。
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |